Room-temperature terahertz heterodyne mixing in GaAs commercial transistors

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Volumn , Issue , 2013, Pages

  Tohme, L ^a   Blin, S ^a   Nouvel, P ^b   Varani, L ^a   Penarier, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HETERODYNE MIXING; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; ROOM TEMPERATURE; TERA HERTZ; THZ SOURCES;

GALLIUM ARSENIDE; HETERODYNING; SEMICONDUCTING GALLIUM; TERAHERTZ WAVES;

MIXING;

EID: 84893377590     PISSN: 21622027     EISSN: 21622035     Source Type: Conference Proceeding    
DOI: 10.1109/IRMMW-THz.2013.6665895     Document Type: Conference Paper

References (5)

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2. S. Preu et al., "Terahertz detection by a homodyne field effect transistor multiplicative mixer", IEEE Transaction on Terahertz and Sources, vol. 2, no. 3, pp. 278-283, 2012.
3. A. Lisauskas et al., "Terahertz imaging with GaAs field-effect transistors", Electron. Lett., vol. 44, no. 6, pp. 408-409, 2008.
4. D. Coquillat et al., "Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode", Jpn. J. Appl. Phys., vol. 50, no. 8, 2011.
5. S. Blin et al., "Plasma-wave detectors for terahertz wireless communication," IEEE Electr. Dev. Lett., vol. 33, no. 10, pp. 1354-1356,2012.