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Volumn , Issue , 2013, Pages

Nonlinear photoresponse of FET THz broadband detectors at high power irradiation

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND DETECTORS; HIGH INTENSITY; HIGH POWER; INCIDENT RADIATION; LINEAR DETECTION; PHOTORESPONSES; THZ RADIATION;

EID: 84893369639     PISSN: 21622027     EISSN: 21622035     Source Type: Conference Proceeding    
DOI: 10.1109/IRMMW-THz.2013.6665747     Document Type: Conference Paper
Times cited : (3)

References (5)
  • 1
    • 79960903949 scopus 로고    scopus 로고
    • Terahertz imaging achieved with low-cost CMOS detectors
    • F. Schuster, W. Knap, and V. Nguyen, "Terahertz imaging achieved with low-cost CMOS detectors," Laser Focus World, vol. 47(7), pp. 37-41, 2011
    • (2011) Laser Focus World , vol.47 , Issue.7 , pp. 37-41
    • Schuster, F.1    Knap, W.2    Nguyen, V.3
  • 2
    • 84862143094 scopus 로고    scopus 로고
    • Detection of nanosecond-scale, high power THz pulses with a field effect transistor
    • S. Preu, H. Lu, M. S. Sherwin, and A. C. Gossard, "Detection of nanosecond-scale, high power THz pulses with a field effect transistor," Review of Scientific Instruments, vol. 83, pp. 053101-6, 2012.
    • (2012) Review of Scientific Instruments , vol.83 , pp. 053101-053106
    • Preu, S.1    Lu, H.2    Sherwin, M.S.3    Gossard, A.C.4
  • 3
    • 0030270181 scopus 로고    scopus 로고
    • Plasma wave electronics: Novel terahertz devices using two dimensional electron fluid
    • M. I. Dyakonov and M. S. Shur, "Plasma wave electronics: novel terahertz devices using two dimensional electron fluid," Electron Devices, IEEE Transactions on, vol. 43, pp. 1640-1645, 1996.
    • (1996) Electron Devices, IEEE Transactions on , vol.43 , pp. 1640-1645
    • Dyakonov, M.I.1    Shur, M.S.2
  • 4
    • 80052933413 scopus 로고    scopus 로고
    • Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
    • M. Sakowicz, M. B. Lifshits, O. A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, et al., "Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects," Journal of Applied Physics, vol. 110, pp. 054512-6, 2011.
    • (2011) Journal of Applied Physics , vol.110 , pp. 054512-054516
    • Sakowicz, M.1    Lifshits, M.B.2    Klimenko, O.A.3    Schuster, F.4    Coquillat, D.5    Teppe, F.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.