메뉴 건너뛰기




Volumn 104, Issue 3, 2014, Pages

Resistive switching memories in MoS2 nanosphere assemblies

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL BISTABILITY; INDIUM TIN OXIDE; POLARIZED POTENTIAL; REDUCED GRAPHENE OXIDES; RESISTANCE RATIO; RESISTANCE SWITCHING MECHANISMS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY;

EID: 84893372282     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862755     Document Type: Article
Times cited : (72)

References (46)
  • 1
  • 12
    • 16244390885 scopus 로고    scopus 로고
    • 10.1038/nmat1359
    • M. Wuttig, Nature Mater. 4, 265 (2005). 10.1038/nmat1359
    • (2005) Nature Mater. , vol.4 , pp. 265
    • Wuttig, M.1
  • 15
  • 16
    • 84863116936 scopus 로고    scopus 로고
    • 10.1557/mrs.2012.4
    • T. Lee and Y. Chen, MRS Bull. 37, 144 (2012). 10.1557/mrs.2012.4
    • (2012) MRS Bull. , vol.37 , pp. 144
    • Lee, T.1    Chen, Y.2
  • 19
    • 33746013199 scopus 로고    scopus 로고
    • 10.1126/science.1126230
    • E. Y. Tsymbal and H. Kohlstedt, Science 313, 181 (2006). 10.1126/science.1126230
    • (2006) Science , vol.313 , pp. 181
    • Tsymbal, E.Y.1    Kohlstedt, H.2
  • 46
    • 84893374927 scopus 로고    scopus 로고
    • 2 nanospheres/ITO memory device.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.