All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Renteria, J ^a   Samnakay, R ^a   Jiang, C ^a   Pope, T R ^b   Goli, P ^a   Yan, Z ^a   Wickramaratne, D ^a   Salguero, T T ^b   Khitun, A G ^a   Lake, R K ^a   Balandin, A A ^a,b  

^a University of California Riverside   (United States)

^b UNIVERSITY OF GEORGIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; LOGIC CIRCUITS; SELENIUM COMPOUNDS; TANTALUM COMPOUNDS; THIN FILMS; TIMING CIRCUITS; TRANSPORT PROPERTIES; VAN DER WAALS FORCES;

ABRUPT TRANSITION; CHEMICAL VAPOR TRANSPORT; CONDUCTING CHANNELS; DRAIN-SOURCE CURRENTS; ELECTRICAL GATING; NANO-METER SCALE; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; THREE-TERMINAL DEVICES;

THIN FILM CIRCUITS;

EID: 84893339039     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862336     Document Type: Article

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