Principles of metallic field effect transistor (METFET)

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 37-40

  Rotkin, Slava V ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Metal FET; Molecular devices; Nanotube; Symmetry breaking; Theory

Indexed keywords

BINDING ENERGY; CALCULATIONS; ELECTRIC FIELDS; GATES (TRANSISTOR); MOLECULAR DYNAMICS; NANOTUBES; PERTURBATION TECHNIQUES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; WAVE EQUATIONS;

METAL FET; MOLECULAR DEVICES; NANOTUBE; SYMMETRY BREAKING;

FIELD EFFECT TRANSISTORS;

EID: 6344237310     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)

1. Advanced Theory Of Semiconductor Devices// Karl Hess. New York: IEEE Press, 2000.
2. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2001); http://public.itrs.net/.
3. http://www.itg.uiuc.edu/exhibits/iotw/2003-09-09/
4. J.-F. Lin, J.P. Bird, L. Rotkina, P.A. Bennett, Appl. Phys. Lett. 82 (5), 802, 2003.
5. S.V. Rotkin, I.Zharov, Int. Journal of Nanoscience 1 (3/4), 347-356, 2002.
6. S.V.Rotkin, K.Hess, Appl.Phys.Lett. (submitted).
7. P. Delaney, H.J.Choi, J.Ihm, S.G.Louie, M.L.Cohen, Nature, 391, 466, 1998
8. J. Appenzeller, Device Research Conference, Utah, June 26, 2003
9. J. Appenzeller, R. Martel, V. Derycke, M. Radosavljevic, S. Wind, D. Neumayer, and Ph. Avouris, Microelectronic Eng., 64, 391, 2002.
10. Ph.G. Collins, Ph. Avouris, Sci.Am., 12, 62, 2002. Ph. Avouris, Chemical Physics, 281, 429, 2002.
11. Ph.G. Collins, Ph. Avouris, Sci.Am., 12, 62, 2002. Ph. Avouris, Chemical Physics, 281, 429, 2002.
12. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris, Phys.Rev.Lett. 89, 106801, 2002.
13. J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Stevens, J. Han, and M. Meyyappan, Appl.Phys.Lett. 82, 2491 (2003).
14. H. Suzuura and T. Ando, Phys. Rev. B 65, 235412, 2002.
15. T. Ando and T. Nakanishi, J. Phys. Soc. Jpn. 67, 1704, 1998. T. Ando, T. Nakanishi and R. Saito, J. Phys. Soc. Japan 67, 2857, 1998.
16. T. Ando and T. Nakanishi, J. Phys. Soc. Jpn. 67, 1704, 1998. T. Ando, T. Nakanishi and R. Saito, J. Phys. Soc. Japan 67, 2857, 1998.
17. A.G.Petrov, S.V.Rotkin, submitted.
18. T. Vukovic, I. Milosevic, M. Damnjanovic, Phys.Rev. B 65(04), 5418, 2002.
19. Although, there is a possibility of scattering to the other valley of the same subband, this scattering amplitude is small due to a large momentum transfer q ≈ 2π/ √3b (see thin line between left and right Fermi points in Fig.l), where b ≈ 0.14 nm is a carbon-carbon bond length.
20. 2/h. This gives a minimum resistance, a contact resistance, of the SWNT device ∼ 6.5kΩ. The lower resistance can be expected in the case of entirely nanotube circuit. The quantum contact resistance will not limit anymore the ON current in this case. That device can fully exploit all advantages of the METFET.
21. Y.Li, S.V.Rotkin, U.Ravaioli, and K.Hess, unpublished.
22. Y.Li, S.V.Rotkin and U.Ravaioli, Nano Letters, vol. 3(2), 183-187, 2003.