Nondestructive monitoring of defect evolution in epitaxial CdTe thin layers grown on Si(111)

Journal of Physical Chemistry C

Volumn 118, Issue 4, 2014, Pages 1968-1973

  Oliveira, J M ^a   Malachias, A ^b   Ospina, C A ^c   Ferreira, S O ^a  

^a FEDERAL UNIVERSITY OF VIÇOSA   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^c BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE DEFECTS; DEFECT EVOLUTION; INDUSTRIAL-SCALE APPLICATIONS; NON-DESTRUCTIVE MONITORING; RECIPROCAL SPACE MAPS; STRAIN INFORMATION; SUBSTRATE ORIENTATION; SYNCHROTRON X RAY DIFFRACTION;

CADMIUM TELLURIDE; DEFECT DENSITY; EPITAXIAL GROWTH; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DEFECTS;

EID: 84893242630     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp409538p     Document Type: Article

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