메뉴 건너뛰기




Volumn 301-302, Issue SPEC. ISS., 2007, Pages 268-272

MBE HgCdTe on Si and GaAs substrates

Author keywords

A1. Crystallites; A3. Molecular beam epitaxy; B1. Tellurites; B3. Infrared devices; B3. Semiconducting II VI materials

Indexed keywords

FOCAL PLANE ARRAYS; INFRARED DEVICES; MERCURY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SUBSTRATES; SURFACE DEFECTS;

EID: 33947326720     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.188     Document Type: Article
Times cited : (52)

References (15)
  • 5
    • 33947315954 scopus 로고    scopus 로고
    • L. He, Y. Wu, L. Chen, W.Y. Zhang, M.F. Yu, J. WU, J.R. Yang, Y.J. Li, R.J. Ding, Q.Y. Zhang, S.C. Shen, in: Proceedings of the 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, September 27, 2004-October 1, Karlsruhe, Germany, 2004.
  • 7
    • 33947327231 scopus 로고    scopus 로고
    • J.S. Chen, US patent, No. 4, vol. 897, 1990, p. 152.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.