Structural analysis of CdTe hetero-epitaxy on (211) Si

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1231-1236

  Benson, J D ^a   Jacobs, R N ^a   Markunas, J K ^a   Jaime Vasquez, M ^a   Smith, P J ^a   Almeida, L A ^a   Martinka, M ^a   Vilela, M F ^b   Lee, U ^c  

^a US Army Research Development and Engineering Command   (United States)

^b RAYTHEON COMPANY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Atomic force microscopy; CdTe Si; Etch pit density; HgCdTe; Molecular beam epitaxy; Mosaic structure; Reflection high energy electron diffraction; X ray diffraction full width at half maximum

Indexed keywords

AFM MEASUREMENTS; CDTE/SI; CRYSTALLINE GRAINS; ETCH PIT DENSITY; HETERO-EPITAXY; HGCDTE; MOSAIC STRUCTURE; MOSAIC STRUCTURES; NOMARSKI MICROSCOPY; SCANNING ELECTRON MICROSCOPY (SEM); X-RAY DIFFRACTION; X-RAY DIFFRACTION FULL-WIDTH AT HALF-MAXIMUM; XRD MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; HIGH ENERGY ELECTRON DIFFRACTION; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING PROBE MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STANDARDS; STRUCTURAL ANALYSIS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

IMAGING TECHNIQUES;

EID: 51849093955     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0469-5     Document Type: Article

References (30)

1. N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, N. Goldsman, J. Electron. Mater. 29, 748 (2000).
2. For (111) CdZnTe by H. Figgemeier, J. Electron. Mater. 32, 588 (2003).
3. G.A. Carini, C. Arnone, A.E. Bolotnikov, G.S. Camarda, R.E. DeWames, J.H. Dinan, J.K. Markunas, B. Raghothamacher, S. Sivananthan, R. Smith, J. Zhao, Z. Zhong, R.B. James, J. Electron. Mater. 35, 1495 (2006).
4. 0.28Te by L.A. Almeida, M. Groenert, J. Markunas, and J.H. Dinan, J. Electron. Mater. 35, 1214 (2006).
5. D. Edwall, E. Piquette, J. Ellsworth, J. Arias, C.H. Swartz, L. Bai, R.P. Tompkins, N.C. Giles, T.H. Myers, M. Berding, J. Electron. Mater. 33, 752 (2004).
6. 0.398Te by M. Martinka, L.A. Almeida, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 31, 732 (2002).
7. T.J. de Lyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, G.M. Venzor, J. Electron. Mater. 28, 705 (1999).
8. 0.04Te by Y.P. Chen, G. Brill, E.M. Campo, T. Hierl, J.C.M. Hwang, and N.K. Dhar, J. Electron. Mater. 33, 498 (2004).
9. M. Carmody, J.G. Pasko, D. Edwall, M. Darasellia, L.A. Almeida, J. Molstad, J.H. Dinan, J.K. Markunas, Y. Chen, G. Brill, N.K. Dhar, J. Electron. Mater. 33, 531 (2004).
10. M. Carmody, J.G. Pasko, D. Edwall, R. Bailey, J. Arias, S. Cabelli, J. Bajaj, L.A. Almeida, J.H. Dinan, M. Groenert, A.J. Stoltz, Y. Chen, G. Brill, N.K. Dhar, J. Electron. Mater. 34, 832 (2005).
11. S.M. Johnson, A.A. Buell, M.F. Vilela, J.M. Peterson, J.B. Varesi, M.D. Newton, G.M. Venzor, R.E. Bornfreund, W.A. Radford, E.P.G. Smith, J.P. Rosbeck, T.J. De Lyon, J.E. Jensen, V. Nathan, J. Electron. Mater. 33, 526 (2004).
12. K. Jowikowski, A. Rogalski, J. Electron. Mater. 29, 736 (2000).
13. R.S. List, J. Electron. Mater. 22, 1017 (1993).
14. S.M. Johnson, D.R. Rhiger, J.P. Rosenbeck, J.M. Peterson, S.M. Taylor, M.E. Boyd, J. Vac. Sci. Technol. B10, 1499 (1992).
15. M. Jaime-Vasquez, M. Martinka, R.N. Jacobs, J.D. Benson, J. Electron. Mater. 36, 905 (2007).
16. P.J. Taylor, W.A. Jesser, M. Martinka, K.M. Singley, J.H. Dinan, R.T. Lareau, M.C. Wood, W.W. Clarke III, J. Vac. Sci. Technol. A 17, 1153 (1999).
17. www.bede.co.uk.
18. J.E. Mahan, K.M. Geib, G.Y. Robinson, R.G. Long, J. Vac. Sci. Technol. A8, 3692 (1990).
19. Digital Instruments Veeco Metrology, Santa Barbara, CA 93117., available at: www.veeco.com
20. L. Marsal, H. Mariette, Y. Samson, J.L. Rouviere, E. Picard, Appl. Phys. Lett. 73, 2974 (1998).
21. W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Schaake, J. Electron. Mater. 24, 505 (1995).
22. J.E. Ayers, Hetero-Epitaxy of Semiconductors: Theory, Growth, and Characterization (New York, NY: CRC Press, 2007), p. 332.
23. V.M. Kaganer, A. Shalimov, J. Bak-Misiuk, K.H. Ploog, Phys. Stat. Sol. A 204, 2561 (2007).
24. o ) for this work were calculated using the web site www.sergey.gmca.aps.anl.gov.
25. J.E. Ayers, J. Crystal Growth 135, 71 (1994).
26. J.D. Benson, A.J. Stoltz, J.B. Varesi, L.A. Almeida, E.P.G. Smith, S.M. Johnson, M. Martinka, A.W. Kaleczyc, J.K. Markunas, P.R. Boyd, J.H. Dinan, J. Electron. Mater. 34, 726 (2005).
27. M.G. Lagally, D.E. Savage, and M.C. Tringides, Proceedings of a NATO Advanced Research Workshop on Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces (Veldhoven, Netherlands, 1987), p. 139.
28. J.E. Ayers, L.J. Schowalter, S.K. Ghandhi, J. Crystal Growth 125, 329 (1992).
29. D.J. Stirland, B.W. Straughan, Thin Solid Films 31, 139 (1976).
30. K. Ishida, M. Akiyama, S. Nishi, Jap. J. Appl. Phys. 26, L163 (1987).