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Volumn 56, Issue 3, 2009, Pages 836-840

MOVPE growth of cdte on si substrates for gamma ray detector fabrication

Author keywords

CdTe thick films; Gamma ray detector; Heteroepitaxy; Medical imaging; MOVPE growth

Indexed keywords

CDTE; CDTE THICK FILMS; CRYSTALLINE QUALITY; DETECTOR LEAKAGE CURRENTS; ENERGY PEAKS; GAMMA DETECTORS; GAMMA RAY DETECTOR; HETEROEPITAXY; HETEROJUNCTION DIODES; HIGH-CRYSTALLINE QUALITY; MONOCRYSTALLINE; MOVPE GROWTH; PHOTOLUMINESCENCE MEASUREMENTS; RECTIFYING BEHAVIORS; REVERSE BIAS LEAKAGE CURRENT; ROOM TEMPERATURE; SI SUBSTRATES; SUBSTRATE TEMPERATURE; THREE ORDERS OF MAGNITUDE;

EID: 67649185543     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2010256     Document Type: Article
Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.