Accuracy of existing atomic potentials for the CdTe semiconductor compound

Journal of Chemical Physics

Volumn 134, Issue 24, 2011, Pages

  Ward, D K ^a   Zhou, X W ^a   Wong, B M ^a   Doty, F P ^a   Zimmerman, J A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMIC POTENTIAL; ATOMIC-SCALE DEFECTS; CDTE; CDTE CRYSTALS; CDTE SEMICONDUCTOR; CRYSTALLINE GROWTH; DEFECT STUDY; INTERATOMIC POTENTIAL; LOCAL CONFIGURATIONS; LOWEST ENERGY STRUCTURE; MANUFACTURING PROCESS; MELTING BEHAVIOR; MELTING TEMPERATURES; MICRO-SCALES; MOLECULAR DYNAMICS SIMULATIONS; SEMICONDUCTOR COMPOUNDS;

CADMIUM ALLOYS; CALCULATIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALS; MEDICAL IMAGING; MELTING; MOLECULAR DYNAMICS; RADIATION DETECTORS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS;

CADMIUM COMPOUNDS;

EID: 79960159059     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596746     Document Type: Article

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