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Volumn 7660, Issue , 2010, Pages

Wide band (2.5 - 10.5 μm), high frame rate IRFPAs based on high operability MCT on silicon

Author keywords

high frame rate; infrared; MCT; MCT on Si

Indexed keywords

ARRAY DESIGN; CDTE; CHARGE STORAGE; DUAL-WAVEBAND; FLIP CHIP; FRAME RATE; HETEROSTRUCTURES; HIGH FRAME RATE; HIGH-SPEED; INFRARED; MCT; MCT ON SI; MERCURY CADMIUM TELLURIDE; MESA-DIODES; METAL-ORGANIC VAPOR PHASE EPITAXY; NEGATIVE LUMINESCENCE; QINETIQ; READOUT INTEGRATED CIRCUITS; REPRODUCIBILITIES; SILICON SUBSTRATES; SILICON TECHNOLOGIES; WAVEBANDS; WIDE-BAND; WINDOW SIZE;

EID: 79953707942     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.853195     Document Type: Conference Paper
Times cited : (2)

References (10)
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    • Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates
    • T. J. de Lyon, J. A. Roth, O. K. Wu, S. M. Johnson, and C. A. Cockrum, "Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates", Appl. Phys Lett 63, 818 (1993).
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    • J. E. Hails, A. M. Keir, A. Graham, G. M. Williams and J. Giess, "Influence of the silicon substrate on defect formation in MCT grown on II-VI buffered Si using a combined molecular beam epitaxy / metal organic vapor phase epitaxy technique" J. Electron. Mater. 36, 864 (2007).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.