Edge effects in bottom-gate inverted staggered thin-film transistors

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2501-2506

  Mativenga, Mallory ^a   Um, Jae Kwang ^a   Kang, Dong Han ^a   Mruthyunjaya, Ravi K ^b   Chang, Jeff H ^b   Heiler, Gregory N ^b   Tredwell, Timothy J ^b   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b CARESTREAM HEALTH INC   (United States)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); amorphous oxide semiconductor (AOS); channel width dependence; edge effects; hydrogenated amorphous silicon (a Si:H); thin film transistor (TFT)

Indexed keywords

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); AMORPHOUS OXIDE SEMICONDUCTORS; CHANNEL WIDTHS; EDGE EFFECT; HYDROGENATED AMORPHOUS SILICON (A-SI:H); THIN-FILM TRANSISTOR (TFTS);

SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 84865332869     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2205258     Document Type: Article

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