Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

  Hanyu, Yuichiro ^a   Domen, Kay ^a   Nomura, Kenji ^a   Hiramatsu, Hidenori ^a   Kumomi, Hideya ^a   Hosono, Hideo ^a   Kamiya, Toshio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); ANNEALING TEMPERATURES; DESORPTION TEMPERATURES; EXPERIMENTAL EVIDENCE; HYDROGEN PASSIVATION; OPERATION CHARACTERISTIC; THERMAL DESORPTION SPECTRA; THIN-FILM TRANSISTOR (TFTS);

BINDING ENERGY; DESORPTION; ELECTRON TRAPS; GALLIUM; HYDROGEN; PASSIVATION; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; ZINC;

ANNEALING;

EID: 84889638472     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4832076     Document Type: Article

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