SCOPUS 정보 검색 플랫폼

Measurement: Journal of the International Measurement Confederation

Volumn 50, Issue 1, 2014, Pages 172-174

Characteristics of MSM photodetector fabricated on porous In 0.08Ga0.92N

(4) Abud, Saleh H a Hassan, Z a Yam, F K a Chin, C W a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

Current time measurements; III V SMS photodetector; Porous InGaN

Indexed keywords

DEPOSITION; ETCHING; GALLIUM; PHOTODETECTORS; THIN FILMS;

ANODIC ETCHING; HIGH-WORK-FUNCTION METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MSM PHOTODETECTOR; NANOPOROUS STRUCTURES; POROUS INGAN; RECOVERY TIME; RESPONSIVITY;

PHOTONS;

EID: 84893058695 PISSN: 02632241 EISSN: None Source Type: Journal
DOI: 10.1016/j.measurement.2014.01.016 Document Type: Article

Times cited : (18)

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