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Journal of Physics D: Applied Physics

Volumn 47, Issue 4, 2014, Pages

Fluorine doped SnO2 (FTO) nanobelts: Some data on electronic parameters

(4) Amorim, Cleber A a Dalmaschio, Cleocir J b Leite, Edson R b Chiquito, Adenilson J a

a FEDERAL UNIVERSITY OF SÃO CARLOS (Brazil)

b UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

electron mobility; electronic transport; field effect transistor; fluorine doped tin oxide; variable range hopping

Indexed keywords

CONDUCTION MECHANISM; DOMINANT MECHANISM; ELECTRONIC PARAMETERS; ELECTRONIC TRANSPORT; FLUORINE DOPED TIN OXIDE; LOCALIZATION LENGTH; TEMPERATURE-DEPENDENT RESISTIVITY; VARIABLE RANGE HOPPING;

CARRIER CONCENTRATION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; NANOBELTS;

FLUORINE;

EID: 84892410190 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/47/4/045301 Document Type: Article

Times cited : (12)

References (41)

1
- 0030980674
- 10.1046/j.1365-2818.1997.1670730.x 0022-2720
- Ajayan P M and Redlich P 1997 J. Microsc. 185 275
- (1997) J. Microsc. , vol.185 , pp. 275
- Ajayan, P.M.¹ Redlich, P.²

2
- 77953623916
- 10.1021/cm1004592
- Hoel C A, Mason T O, Gaillard J F and Poeppelmeier K R 2010 Chem. Mater. 22 3569
- (2010) Chem. Mater. , vol.22 , pp. 3569
- Hoel, C.A.¹ Mason, T.O.² Gaillard, J.F.³ Poeppelmeier, K.R.⁴

3
- 79955921149
- 10.1088/0953-8984/23/20/205803 0953-8984 205803
- Amorim C A, Berengue O M, Kamimura H, Leite E R and Chiquito A J 2011 J. Phys.: Condens. Matter 23 205803
- (2011) J. Phys.: Condens. Matter , vol.23 , Issue.20
- Amorim, C.A.¹ Berengue, O.M.² Kamimura, H.³ Leite, E.R.⁴ Chiquito, A.J.⁵

4
- 59349083356
- 10.1063/1.3068185 023708
- Lanfredi A J, Geraldes R R, Berengue O M, Leite E R and Chiquito A J 2009 J. Appl. Phys. 105 023708
- (2009) J. Appl. Phys. , vol.105
- Lanfredi, A.J.¹ Geraldes, R.R.² Berengue, O.M.³ Leite, E.R.⁴ Chiquito, A.J.⁵

5
- 34249677911
- 3 nanowires
- DOI 10.1021/nl070178k
- Chiquito A, Lanfredi R F O, Pozzi L P and Leite E R 2007 Nano Lett. 7 1439 (Pubitemid 46834436)
- (2007) Nano Letters , vol.7 , Issue.5 , pp. 1439-1443
- Chiquito, A.J.¹ Lanfredi, A.J.C.² De Oliveira, R.F.M.³ Pozzi, L.P.⁴ Leite, E.R.⁵

6
- 84867055488
- 10.1016/j.snb.2012.07.111 0925-4005 B
- Lupan O, Chowa L, Pauporté Th, Ono L K, Roldan Cuenya B and Chai G 2012 Sensors Actuators B 173 772
- (2012) Sensors Actuators , vol.173 , pp. 772
- Lupan, O.¹ Chowa, L.² Th, P.³ Ono, L.K.⁴ Roldan Cuenya, B.⁵ Chai, G.⁶

7
- 84865741336
- 10.1016/j.ceramint.2012.05.043 0272-8842
- Changhyun J, Hyunsu K, Sunghoon P, Hyoun W K, Sangmin L and Chongmu L 2012 Ceram. Int. 38 6585
- (2012) Ceram. Int. , vol.38 , pp. 6585
- Changhyun, J.¹ Hyunsu, K.² Sunghoon, P.³ Hyoun, W.K.⁴ Sangmin, L.⁵ Chongmu, L.⁶

8
- 78349313275
- 10.1016/j.tsf.2010.09.055 0040-6090
- Changhyun J, Chanseok H, Sunghoon P and Chongmu L 2010 Thin Solid Films 519 1351
- (2010) Thin Solid Films , vol.519 , pp. 1351
- Changhyun, J.¹ Chanseok, H.² Sunghoon, P.³ Chongmu, L.⁴

9
- 59649104372
- 10.1016/j.mseb.2008.12.035 0921-5107 B
- Lupan O, Chowa L, Chaic G, Schultea A, Parka S and Heinrich H 2009 Mater. Sci. Eng. B 157 101
- (2009) Mater. Sci. Eng. , vol.157 , pp. 101
- Lupan, O.¹ Chowa, L.² Chaic, G.³ Schultea, A.⁴ Parka, S.⁵ Heinrich, H.⁶

10
- 17044363770
- ZnO nanowire field-effect transistor and oxygen sensing property
- DOI 10.1063/1.1836870
- Fan Z, Wang D, Chang P C, Tseng W Y and Lu J G 2004 Appl. Phys. Lett. 85 5923 (Pubitemid 40817941)
- (2004) Applied Physics Letters , vol.85 , Issue.24 , pp. 5923-5925
- Fan, Z.¹ Wang, D.² Chang, P.-C.³ Tseng, W.-Y.⁴ Lu, J.G.⁵

11
- 7544230090
- 10.1021/nl0489283
- Zhang D, Liu Z, Li C, Tang T, Liu X, Han S, Bo L and Zhou C 2004 Nano Lett. 4 1919
- (2004) Nano Lett. , vol.4 , pp. 1919
- Zhang, D.¹ Liu, Z.² Li, C.³ Tang, T.⁴ Liu, X.⁵ Han, S.⁶ Bo, L.⁷ Zhou, C.⁸

12
- 34548173027
- 2 nanowires
- DOI 10.1021/nl0712217
- Dattoli E N, Wan Q, Guo W, Chen Y, Pan X and Lu W 2007 Nano Lett. 7 2463 (Pubitemid 47310146)
- (2007) Nano Letters , vol.7 , Issue.8 , pp. 2463-2469
- Dattoli, E.N.¹ Wan, Q.² Guo, W.³ Chen, Y.⁴ Pan, X.⁵ Lu, W.⁶

13
- 34249944427
- Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
- DOI 10.1038/nnano.2007.151, PII NNANO2007151
- Sanghyun J, Antonio F, Yi X, Jun L, Fumiaki I, Peide Y, Chongwu Z, Tobin J M and David B J 2007 Nature Nanotechnol. 2 378 (Pubitemid 46878166)
- (2007) Nature Nanotechnology , vol.2 , Issue.6 , pp. 378-384
- Ju, S.¹ Facchetti, A.² Xuan, Y.³ Liu, J.⁴ Ishikawa, F.⁵ Ye, P.⁶ Zhou, C.⁷ Marks, T.J.⁸ Janes, D.B.⁹

14
- 0037020311
- 10.1002/1521-3765(20021004)8:19<4354 ::AID-CHEM4354>3.0. CO;2-1
- Kovtyukhova N I and Mallouk T E 2002 Chem. - Eur. J. 8 4354
- (2002) Chem. - Eur. J. , vol.8 , pp. 4354
- Kovtyukhova, N.I.¹ Mallouk, T.E.²

15
- 1642634501
- 10.1016/j.ssc.2004.02.013 0038-1098
- Ma Y J, Zhou F and Zhang Z 2004 Solid State Commun. 130 313
- (2004) Solid State Commun. , vol.130 , pp. 313
- Ma, Y.J.¹ Zhou, F.² Zhang, Z.³

16
- 0037461671
- 10.1021/jp0271054 1089-5647 B
- Arnold M S, Avouris P, Pan Z W and Wang Z L 2003 J. Phys. Chem. B 107 659
- (2003) J. Phys. Chem. , vol.107 , pp. 659
- Arnold, M.S.¹ Avouris, P.² Pan, Z.W.³ Wang, Z.L.⁴

17
- 0242440211
- 10.1002/adma.200305439
- Liu Z, Zhang D, Han S, Li C, Tang T, Jin W, Liu X, Lie B and Zhou C 2003 Adv. Mater. 15 1754
- (2003) Adv. Mater. , vol.15 , pp. 1754
- Liu, Z.¹ Zhang, D.² Han, S.³ Li, C.⁴ Tang, T.⁵ Jin, W.⁶ Liu, X.⁷ Lie, B.⁸ Zhou, C.⁹

18
- 34249868997
- Transparent metallic Sb-doped Sn O2 nanowires
- DOI 10.1063/1.2743746
- Wan Q, Dattoli E N and Lu W 2007 Appl. Phys. Lett. 90 222107 (Pubitemid 46872625)
- (2007) Applied Physics Letters , vol.90 , Issue.22 , pp. 222107
- Wan, Q.¹ Dattoli, E.N.² Lu, W.³

19
- 0028422234
- 10.1111/j.1151-2916.1994.tb07247.x 0002-7820
- Kim K H, Lee S W, Shin D W and Park C G 1994 J. Am. Ceram. Soc. 77 915
- (1994) J. Am. Ceram. Soc. , vol.77 , pp. 915
- Kim, K.H.¹ Lee, S.W.² Shin, D.W.³ Park, C.G.⁴

20
- 0021097455
- Transparent conductors - A status review
- DOI 10.1016/0040-6090(83)90256-0
- Chopra K L, Mayor S and Pandya D K 1983 Thin Solid Films 102 1 (Pubitemid 13540533)
- (1983) Thin Solid Films , vol.102 , Issue.1 , pp. 1-46
- Chopra, K.L.¹ Major, S.² Pandya, D.K.³

21
- 21844511608
- 10.1116/1.579592 0734-2101 A
- Minami T, Takata S, Sato H and Sonohara H 1995 J. Vac. Sci. Technol. A 13 1095
- (1995) J. Vac. Sci. Technol. , vol.13 , pp. 1095
- Minami, T.¹ Takata, S.² Sato, H.³ Sonohara, H.⁴

22
- 33750907543
- Transport and sensors properties of nanostructured antimony-doped tin oxide films
- DOI 10.1016/j.tsf.2006.06.025, PII S0040609006007838
- Giraldi T R, Escote M T, Maciel A P, Longo E, Leite E R and Varela J A 2006 Thin Solid Films 515 2678 (Pubitemid 44724909)
- (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 2678-2685
- Giraldi, T.R.¹ Escote, M.T.² Maciel, A.P.³ Longo, E.⁴ Leite, E.R.⁵ Varela, J.A.⁶

23
- 70249126896
- 10.1088/0957-4484/20/33/335204 0957-4484 335204
- Sun J, Lu A, Wang L, Hu Y and Wan Q 2009 Nanotechnology 20 335204
- (2009) Nanotechnology , vol.20 , Issue.33
- Sun, J.¹ Lu, A.² Wang, L.³ Hu, Y.⁴ Wan, Q.⁵

24
- 0000754468
- 10.1016/S0921-5107(98)00314-6 0921-5107 B
- Shanthi S, Subramanian C and Ramasamy P 1999 Mater. Sci. Eng. B 57 127
- (1999) Mater. Sci. Eng. , vol.57 , pp. 127
- Shanthi, S.¹ Subramanian, C.² Ramasamy, P.³

25
- 67349164848
- 10.1016/j.materresbull.2009.02.019 0025-5408
- Aouaj M A, Diaz R, Belayachi A, Rueda F and Abd-Lefdil M 2009 Mater. Res. Bull. 44 1458
- (2009) Mater. Res. Bull. , vol.44 , pp. 1458
- Aouaj, M.A.¹ Diaz, R.² Belayachi, A.³ Rueda, F.⁴ Abd-Lefdil, M.⁵

26
- 77955663179
- 10.1016/j.apsusc.2010.04.052 0169-4332
- Bilgin V, Akyuz I, Ketenci E, Kose S and Atay F 2010 Appl. Surf. Sci. 256 6586
- (2010) Appl. Surf. Sci. , vol.256 , pp. 6586
- Bilgin, V.¹ Akyuz, I.² Ketenci, E.³ Kose, S.⁴ Atay, F.⁵

27
- 23744493187
- 2 nanowires: Synthesis and gas sensor application
- DOI 10.1039/b504094a
- Wan Q and Wang T H 2005 Chem. Commun. 30 3841 (Pubitemid 41139757)
- (2005) Chemical Communications , Issue.30 , pp. 3841-3843
- Wan, Q.¹ Wang, T.H.²

28
- 51249093495
- 10.1016/j.cap.2007.11.010 1567-1739
- Purushothaman K K, Dhanashankar M and Muralidharan G 2009 Curr. Appl. Phys. 9 67
- (2009) Curr. Appl. Phys. , vol.9 , pp. 67
- Purushothaman, K.K.¹ Dhanashankar, M.² Muralidharan, G.³

29
- 33751122778
- 10.1063/1.1753975
- Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

30
- 76949101246
- 10.1063/1.3294613 033717
- Berengue O M, Simon R A, Chiquito A J, Dalmaschio C J, Leite E R, Guerreiro H A and Guimarães F E G 2010 J. Appl. Phys. 107 033717
- (2010) J. Appl. Phys. , vol.107
- Berengue, O.M.¹ Simon, R.A.² Chiquito, A.J.³ Dalmaschio, C.J.⁴ Leite, E.R.⁵ Guerreiro, H.A.⁶ Guimarães, F.E.G.⁷

31
- 0004005306
- Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

32
- 36749063485
- Fabrication and characterization of fluorine-doped thin oxide thin films and nanorod arrays via spray pyrolysis
- DOI 10.1007/s00339-007-4274-4
- Russo B and Cao G Z 2008 Appl. Phys. A 90 311 (Pubitemid 350212065)
- (2008) Applied Physics A: Materials Science and Processing , vol.90 , Issue.2 , pp. 311-315
- Russo, B.¹ Cao, G.Z.²

33
- 0006792916
- 10.1103/PhysRevB.61.12970 B
- Sato T, Ohashi K, Sugai H, Sumi T, Haruna K, Maeta H, Matsumoto N and Otsuka H 2000 Phys. Rev. B 61 12970
- (2000) Phys. Rev. , vol.61 , pp. 12970
- Sato, T.¹ Ohashi, K.² Sugai, H.³ Sumi, T.⁴ Haruna, K.⁵ Maeta, H.⁶ Matsumoto, N.⁷ Otsuka, H.⁸

34
- 0004032707
- Mott N F 1990 Metal-Insulator Transitions (London: Taylor and Francis)
- (1990) Metal-Insulator Transitions
- Mott, N.F.¹

35
- 0001519718
- 10.1103/RevModPhys.40.815 0034-6861
- Alexander M N and Holcomb D F 1968 Rev. Mod. Phys. 40 815
- (1968) Rev. Mod. Phys. , vol.40 , pp. 815
- Alexander, M.N.¹ Holcomb, D.F.²

36
- 84867024968
- 10.1039/c2ra20973j
- Hongwei L, Cheng S, Junpeng L, Zhengi M, Lim K Y, Nripan M, Subodh G M, Tang S H, Zhang X and Sow C H 2012 RSC Adv. 2 9590
- (2012) RSC Adv. , vol.2 , pp. 9590
- Hongwei, L.¹ Cheng, S.² Junpeng, L.³ Zhengi, M.⁴ Lim, K.Y.⁵ Nripan, M.⁶ Subodh, G.M.⁷ Tang, S.H.⁸ Zhang, X.⁹ Sow, C.H.¹⁰

37
- 79551654544
- 10.1002/adfm.201001521
- Wu H C, Huang Y C, Ding I K, Chen C C, Yang Y H, Tsai C C, Chen C D and Chen Y T 2011 Adv. Funct. Mater. 21 474
- (2011) Adv. Funct. Mater. , vol.21 , pp. 474
- Wu, H.C.¹ Huang, Y.C.² Ding, I.K.³ Chen, C.C.⁴ Yang, Y.H.⁵ Tsai, C.C.⁶ Chen, C.D.⁷ Chen, Y.T.⁸

38
- 67649148133
- 10.1088/0957-4484/20/25/255202 0957-4484 255202
- Sun J, Tang Q, Lu A, Jiang X and Wan Q 2009 Nanotechnology 20 255202
- (2009) Nanotechnology , vol.20 , Issue.25
- Sun, J.¹ Tang, Q.² Lu, A.³ Jiang, X.⁴ Wan, Q.⁵

39
- 84868200588
- 10.1016/j.matchemphys.2012.09.037 0254-0584
- Cheng Y, Yang R, Zheng J P, Wang Z L and Xiong P 2012 Mater. Chem. Phys. 137 372
- (2012) Mater. Chem. Phys. , vol.137 , pp. 372
- Cheng, Y.¹ Yang, R.² Zheng, J.P.³ Wang, Z.L.⁴ Xiong, P.⁵

40
- 12344257046
- ZnO nanowire transistors
- DOI 10.1021/jp0452599
- Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9 (Pubitemid 40120935)
- (2005) Journal of Physical Chemistry B , vol.109 , Issue.1 , pp. 9-14
- Goldberger, J.¹ Sirbuly, D.J.² Law, M.³ Yang, P.⁴

41
- 0001677427
- 10.1103/PhysRevB.41.2461 0163-1829 B
- Schirmacher W 1990 Phys. Rev. B 41 246
- (1990) Phys. Rev. , vol.41 , Issue.4 , pp. 2461
- Schirmacher, W.¹

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