Individual SnO2 nanowire transistors fabricated by the gold microwire mask method

Nanotechnology

Volumn 20, Issue 25, 2009, Pages

  Sun, Jia ^a,b   Tang, Qingxin ^a   Lu, Aixia ^a   Jiang, Xuejiao ^a   Wan, Qing ^a,b  

^a HUNAN UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECTS; INORGANIC NANOMATERIALS; MASK METHOD; MICROWIRE; NANOWIRE DEVICES; NANOWIRE TRANSISTORS; ON/OFF RATIO; SB-DOPED SNO; SUBTHRESHOLD SWING; SURFACE MODIFICATION; THERMAL-ANNEALING; TRANSFER CURVES; TRANSISTOR CHARACTERISTICS; TRANSPORT MEASUREMENTS;

FIELD EFFECT TRANSISTORS; NANOWIRES;

ELECTRIC WIRE;

GOLD NANOPARTICLE; NANOMATERIAL; NANOWIRE; TIN; TIN OXIDE;

ARTICLE; ELECTRIC ACTIVITY; HEAT; HYSTERESIS; MEASUREMENT; MOLECULAR MECHANICS; NANODEVICE; NANOFABRICATION; PRIORITY JOURNAL; SEMICONDUCTOR; SURFACE PROPERTY; TRANSPORT KINETICS;

EID: 67649148133     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/25/255202     Document Type: Article

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