Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 19, 2000, Pages 12970-12976

  Sato, Toshimaro ^a   Ohashi, Kazutoshi ^a   Sugai, Hiroyuki ^b  

^a TAMAGAWA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006792916     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.12970     Document Type: Article

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