SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 25, 2012, Pages 9590-9595

Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches

(10) Liu, Hongwei a,b Cheng, Sun c Junpeng, Lu a Minrui, Zheng a Yong, Lim Kim a Mathews, Nripan c Mhaisalkar, Subodh G c Hai, Tang Sing a Xinhai, Zhang b Haur, Sow Chorng a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY DOPING; CONTACT METHODS; ELECTRON TRANSPORTATION; JUNCTION BARRIER; NON-CONTACT; NONCONTACT METHODS; OUTPUT CHARACTERISTICS; SB-DOPED SNO; TERA HERTZ; TERAHERTZ TIME DOMAIN SPECTROSCOPY; TIME DOMAIN;

FIELD EFFECT TRANSISTORS; NANOWIRES; TIME DOMAIN ANALYSIS;

ELECTRIC PROPERTIES;

EID: 84867024968 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c2ra20973j Document Type: Article

Times cited : (10)

References (30)

1
- 53549110257
- A. J. Baca J.-H. Ahn Y. Sun M. A. Meitl E. Menard H.-S. Kim W. M. Choi D.-H. Kim Y. Huang J. A. Rogers Angew. Chem., Int. Ed. 2008 47 5524
- (2008) Angew. Chem., Int. Ed. , vol.47 , pp. 5524
- Baca, A.J.¹ Ahn, J.-H.² Sun, Y.³ Meitl, M.A.⁴ Menard, E.⁵ Kim, H.-S.⁶ Choi, W.M.⁷ Kim, D.-H.⁸ Huang, Y.⁹ Rogers, J.A.¹⁰

2
- 42549136017
- Y.-J. Choi I.-S. Hwang J.-G. Park K. J. Choi J.-H. Park J.-H. Lee Nanotechnology 2008 19 095508
- (2008) Nanotechnology , vol.19 , pp. 095508
- Choi, Y.-J.¹ Hwang, I.-S.² Park, J.-G.³ Choi, K.J.⁴ Park, J.-H.⁵ Lee, J.-H.⁶

3
- 44349105900
- B. Wang L. F. Zhu Y. H. Yang N. S. Xu G. W. Yang J. Phys. Chem. C 2008 112 6643
- (2008) J. Phys. Chem. C , vol.112 , pp. 6643
- Wang, B.¹ Zhu, L.F.² Yang, Y.H.³ Xu, N.S.⁴ Yang, G.W.⁵

4
- 34548173027
- E. N. Dattoli Q. Wan W. Guo Y. Chen X. Pan W. Lu Nano Lett. 2007 7 2463
- (2007) Nano Lett. , vol.7 , pp. 2463
- Dattoli, E.N.¹ Wan, Q.² Guo, W.³ Chen, Y.⁴ Pan, X.⁵ Lu, W.⁶

5
- 0242440211
- Z. Liu D. Zhang S. Han C. Li T. Tang W. Jin X. Liu B. Lei C. Zhou Adv. Mater. 2003 15 1754
- (2003) Adv. Mater. , vol.15 , pp. 1754
- Liu, Z.¹ Zhang, D.² Han, S.³ Li, C.⁴ Tang, T.⁵ Jin, W.⁶ Liu, X.⁷ Lei, B.⁸ Zhou, C.⁹

6
- 50949083726
- S. Gubbala V. Chakrapani V. Kumar M. K. Sunkara Adv. Funct. Mater. 2008 18 2411
- (2008) Adv. Funct. Mater. , vol.18 , pp. 2411
- Gubbala, S.¹ Chakrapani, V.² Kumar, V.³ Sunkara, M.K.⁴

7
- 0141853308
- P. Nguyen H. T. Ng J. Kong A. M. Cassell R. Quinn J. Li J. Han M. McNeil M. Meyyappan Nano Lett. 2003 3 925
- (2003) Nano Lett. , vol.3 , pp. 925
- Nguyen, P.¹ Ng, H.T.² Kong, J.³ Cassell, A.M.⁴ Quinn, R.⁵ Li, J.⁶ Han, J.⁷ McNeil, M.⁸ Meyyappan, M.⁹

8
- 43149087294
- Q. Wan E. Dattoli W. Lu Small 2008 4 451
- (2008) Small , vol.4 , pp. 451
- Wan, Q.¹ Dattoli, E.² Lu, W.³

9
- 34249868997
- Q. Wan E. N. Dattoli W. Lu Appl. Phys. Lett. 2007 90 222107
- (2007) Appl. Phys. Lett. , vol.90 , pp. 222107
- Wan, Q.¹ Dattoli, E.N.² Lu, W.³

10
- 84975561173
- J. T. Darrow B. B. Hu X. C. Zhang D. H. Auston Opt. Lett. 1990 15 323
- (1990) Opt. Lett. , vol.15 , pp. 323
- Darrow, J.T.¹ Hu, B.B.² Zhang, X.C.³ Auston, D.H.⁴

11
- 33344456756
- X. Xie J. Dai X. C. Zhang Phys. Rev. Lett. 2006 96 075005
- (2006) Phys. Rev. Lett. , vol.96 , pp. 075005
- Xie, X.¹ Dai, J.² Zhang, X.C.³

12
- 33748582256
- J. Dai X. Xie X. C. Zhang Phys. Rev. Lett. 2006 97 103903
- (2006) Phys. Rev. Lett. , vol.97 , pp. 103903
- Dai, J.¹ Xie, X.² Zhang, X.C.³

13
- 33645140449
- K. Takahashi N. Kida M. Tonouchi Phys. Rev. Lett. 2006 96 117402
- (2006) Phys. Rev. Lett. , vol.96 , pp. 117402
- Takahashi, K.¹ Kida, N.² Tonouchi, M.³

14
- 34247174373
- M. Tonouchi Nat. Photonics 2007 1 97
- (2007) Nat. Photonics , vol.1 , pp. 97
- Tonouchi, M.¹

15
- 75249088187
- C. Sun N. Mathews M. Zheng C. H. Sow L. H. Wong S. G. Mhaisalkar J. Phys. Chem. C 2009 114 1331
- (2009) J. Phys. Chem. C , vol.114 , pp. 1331
- Sun, C.¹ Mathews, N.² Zheng, M.³ Sow, C.H.⁴ Wong, L.H.⁵ Mhaisalkar, S.G.⁶

16
- 38749136202
- Z. Fan J. C. Ho Z. A. Jacobson R. Yerushalmi R. L. Alley H. Razavi A. Javey Nano Lett. 2007 8 20
- (2007) Nano Lett. , vol.8 , pp. 20
- Fan, Z.¹ Ho, J.C.² Jacobson, Z.A.³ Yerushalmi, R.⁴ Alley, R.L.⁵ Razavi, H.⁶ Javey, A.⁷

17
- 0000811738
- F. J. García-Vidal J. M. Pitarke J. B. Pendry Phys. Rev. Lett. 1997 78 4289
- (1997) Phys. Rev. Lett. , vol.78 , pp. 4289
- García-Vidal, F.J.¹ Pitarke, J.M.² Pendry, J.B.³

18
- 0141553940
- H. C. Weissker J. Furthmüller F. Bechstedt Phys. Rev. B: Condens. Matter 2003 67 165322
- (2003) Phys. Rev. B: Condens. Matter , vol.67 , pp. 165322
- Weissker, H.C.¹ Furthmüller, J.² Bechstedt, F.³

19
- 33846664436
- J. B. Baxter C. A. Schmuttenmaer J. Phys. Chem. B 2006 110 25229
- (2006) J. Phys. Chem. B , vol.110 , pp. 25229
- Baxter, J.B.¹ Schmuttenmaer, C.A.²

20
- 76949086929
- X. H. Zhang H. C. Guo A. M. Yong J. D. Ye S. T. Tan X. W. Sun J. Appl. Phys. 2010 107 033101
- (2010) J. Appl. Phys. , vol.107 , pp. 033101
- Zhang, X.H.¹ Guo, H.C.² Yong, A.M.³ Ye, J.D.⁴ Tan, S.T.⁵ Sun, X.W.⁶

21
- 35548950284
- H. Ahn Y. P. Ku Y. C. Wang C. H. Chuang S. Gwo C.-L. Pan Appl. Phys. Lett. 2007 91 163105
- (2007) Appl. Phys. Lett. , vol.91 , pp. 163105
- Ahn, H.¹ Ku, Y.P.² Wang, Y.C.³ Chuang, C.H.⁴ Gwo, S.⁵ Pan, C.-L.⁶

22
- 0035887468
- N. V. Smith Phys. Rev. B: Condens. Matter 2001 64 155106
- (2001) Phys. Rev. B: Condens. Matter , vol.64 , pp. 155106
- Smith, N.V.¹

23
- 0002749117
- H. J. van Daal Solid State Commun. 1968 6 5
- (1968) Solid State Commun. , vol.6 , pp. 5
- Van Daal, H.J.¹

24
- 33745449217
- C. H. Shen H. Y. Chen H. W. Lin S. Gwo A. A. Klochikhin V. Y. Davydov Appl. Phys. Lett. 2006 88 253104
- (2006) Appl. Phys. Lett. , vol.88 , pp. 253104
- Shen, C.H.¹ Chen, H.Y.² Lin, H.W.³ Gwo, S.⁴ Klochikhin, A.A.⁵ Davydov, V.Y.⁶

25
- 0004235740
- Clarendon, Oxford
- B. K. Ridley, Quantum Processes in Semiconductors, Clarendon, Oxford, 1982
- (1982) Quantum Processes in Semiconductors
- Ridley, B.K.¹

26
- 80051510916
- R. Ulbricht E. Hendry J. Shan T. F. Heinz M. Bonn Rev. Mod. Phys. 2011 83 543
- (2011) Rev. Mod. Phys. , vol.83 , pp. 543
- Ulbricht, R.¹ Hendry, E.² Shan, J.³ Heinz, T.F.⁴ Bonn, M.⁵

27
- 0032621666
- Z. F. Li W. Lu H. J. Ye Z. H. Chen X. Z. Yuan H. F. Dou S. C. Shen G. Li S. J. Chua J. Appl. Phys. 1999 86 2691
- (1999) J. Appl. Phys. , vol.86 , pp. 2691
- Li, Z.F.¹ Lu, W.² Ye, H.J.³ Chen, Z.H.⁴ Yuan, X.Z.⁵ Dou, H.F.⁶ Shen, S.C.⁷ Li, G.⁸ Chua, S.J.⁹

28
- 21544443185
- T. Kozawa T. Kachi H. Kano Y. Taga M. Hashimoto N. Koide K. Manabe J. Appl. Phys. 1994 75 1098
- (1994) J. Appl. Phys. , vol.75 , pp. 1098
- Kozawa, T.¹ Kachi, T.² Kano, H.³ Taga, Y.⁴ Hashimoto, M.⁵ Koide, N.⁶ Manabe, K.⁷

29
- 0004005306
- Wiley, New York, 2nd edn
- S. M. Sze in Physics of Semiconductor Devices, Wiley, New York, 2nd edn, 1981, pp. 29
- (1981) Physics of Semiconductor Devices , pp. 29
- Sze, S.M.¹

30
- 0037461671
- M. S. Arnold P. Avouris Z. W. Pan Z. L. Wang J. Phys. Chem. B 2002 107 659
- (2002) J. Phys. Chem. B , vol.107 , pp. 659
- Arnold, M.S.¹ Avouris, P.² Pan, Z.W.³ Wang, Z.L.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.