Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Applied Physics Letters

Volumn 104, Issue 1, 2014, Pages

  Fu, W ^a   El Abbassi, M ^a,b   Hasler, T ^a   Jung, M ^a   Steinacher, M ^a   Calame, M ^a   Schonenberger C ^a   Puebla Hellmann, G ^c   Hellmuller S ^c   Ihn, T ^c   Wallraff, A ^c  

^a UNIVERSITY OF BASEL   (Switzerland)

^b ECOLE NORMALE SUPÉRIEURE   (France)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTE GATE; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE LAYERS; HIGH FREQUENCY HF; HIGH FREQUENCY MEASUREMENTS; RADIO FREQUENCIES; REFLECTOMETRY MEASUREMENTS; SENSING APPLICATIONS;

ELECTROLYTES; FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

GRAPHENE;

EID: 84892181108     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4857616     Document Type: Article

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