High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization

Nanoscale

Volumn 5, Issue 24, 2013, Pages 12104-12110

  Fu, W ^a   Nef, C ^a   Tarasov, A ^a   Wipf, M ^a   Stoop, R ^a   Knopfmacher, O ^a,b   Weiss, M ^a   Calame, M ^a   Schonenberger C ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOCHEMICAL SENSING; CARBON MATERIAL; CARBON NANOSTRUCTURES; GRAPHENE FIELD EFFECT TRANSISTOR (FET); GRAPHENE TRANSISTORS; HIGH MOBILITY; NON-COVALENT FUNCTIONALIZATION; NONDESTRUCTIVE PROCESS;

ELECTRIC PROPERTIES; ION SENSITIVE FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84888381875     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c3nr03940d     Document Type: Article

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