Orientation-dependent piezoelectricity and domain characteristics of tetragonal Pb(Zr0.3,Ti0.7)0.98Nb 0.02O3 thin films on Nb-doped SrTiO3 substrates

Applied Physics Letters

Volumn 104, Issue 1, 2014, Pages

  Yu, Qi ^a   Li, Jing Feng ^a   Sun, Wei ^a   Zhu, Fang Yuan ^a   Liu, Yuanming ^b   Chen, Yanna ^c   Wang, Zhanjie ^c   Li, Jiangyu ^b  

^a TSINGHUA UNIVERSITY   (China)

^b University of Washington   (United States)

^c INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; DOMAIN CONFIGURATIONS; ELECTRICAL FIELD; EPITAXIALLY GROWN; PIEZOELECTRIC BEHAVIOR; PIEZOELECTRIC PROPERTY; PIEZORESPONSE FORCE MICROSCOPY; STRUCTURAL CHARACTERISTICS;

CRYSTALLOGRAPHY; EPITAXIAL FILMS; EPITAXIAL GROWTH; LEAD; PIEZOELECTRIC DEVICES; SCANNING PROBE MICROSCOPY; ZIRCONIUM;

PIEZOELECTRICITY;

EID: 84892151874     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861469     Document Type: Article

References (35)

1. I. Vrejoiu, G. L. Rhun, L. Pintilie, D. Hesse, M. Alexe, and U. Gosele, Adv. Mater. 18, 1657 (2006). 10.1002/adma.200502711
2. D. S. Fu, H. Suzuki, T. Ogawa, and K. Ishikawa, Appl. Phys. Lett. 80, 3572 (2002). 10.1063/1.1477619
3. Y. K. Kim, H. Morioka, R. Ueno, S. Yokoyama, and H. Funakubo, Appl. Phys. Lett. 86, 212905 (2005). 10.1063/1.1938250
4. I. Vrejoiu, Y. L. Zhu, G. L. Rhun, M. A. Schubert, D. Hesse, and M. Alexe, Appl. Phys. Lett. 90, 072909 (2007). 10.1063/1.2643259
5. M. D. Nguyen, M. Dekkers, E. Houwman, R. Steenwelle, X. Wan, A. Roelofs, T. Schmitz-Kempen, and G. Rijnders, Appl. Phys. Lett. 99, 252904 (2011). 10.1063/1.3669527
6. J.-M. Liu, B. Pan, H. L. W. Chan, S. N. Zhu, Y. Y. Zhu, and Z. G. Liu, Mater. Chem. Phys. 75, 12 (2002). 10.1016/S0254-0584(02)00023-8
7. K. S. Lee, Y. K. Kim, S. Baik, J. Kim, and I. S. Jung, Appl. Phys. Lett. 79, 2444 (2001). 10.1063/1.1406981
8. S. Utsugi, T. Fujisawa, Y. Ehara, T. Yamada, S. Yasui, M.-T. Chentir, H. Morioka, T. Iijima, and H. Funakubo, J. Ceram. Soc. Jpn. 118, 627 (2010). 10.2109/jcersj2.118.627
9. M. Tsukada, H. Yamawaki, and M. Kondo, Appl. Phys. Lett. 83, 4393 (2003). 10.1063/1.1630371
10. G. H. Haertling, J. Am. Ceram. Soc. 82, 797 (1999). 10.1111/j.1151-2916. 1999.tb01840.x
11. N. A. Pertsev and A. Y. Emelyanov, Appl. Phys. Lett. 71, 3646 (1997). 10.1063/1.120468
12. S. Buhlmann and P. Muralt, Adv. Mater. 20, 3090 (2008). 10.1002/adma.200701311
13. X.-H. Du, J. H. Zheng, U. Belegundu, and K. Uchino, Appl. Phys. Lett. 72, 2421 (1998). 10.1063/1.121373
14. D. V. Taylor and D. Damjanovic, Appl. Phys. Lett. 76, 1615 (2000). 10.1063/1.126113
15. Z.-X. Zhu, J.-F. Li, F.-P. Lai, Y. H. Zhen, Y.-H. Lin, C.-W. Nan, and L. T. Li, Appl. Phys. Lett. 91, 222910 (2007). 10.1063/1.2819613
16. I. K. Bdikin, V. V. Shvartsman, and A. L. Kholkin, Appl. Phys. Lett. 83, 4232 (2003). 10.1063/1.1627476
17. M. Pereira, A. G. Peixoto, and M. J. M. Gomes, J. Eur. Ceram. Soc. 21, 1353 (2001). 10.1016/S0955-2219(01)00017-6
18. Z.-X. Zhu, C. Ruangchalermwong, and J.-F. Li, J. Appl. Phys. 104, 054107 (2008). 10.1063/1.2975164
19. G. Binnig and C. F. Quate, Phys. Rev. Lett. 56, 930 (1986). 10.1103/PhysRevLett.56.930
20. P. Güthner and K. Dransfeld, Appl. Phys. Lett. 61, 1137 (1992). 10.1063/1.107693
21. C. T. Nelson, P. Gao, J. R. Jokisaari, C. Heikes, C. Adamo, A. Melville, S.-H. Baek, C. M. Folkman, B. Winchester, Y. J. Ge, Y. M. Liu, K. Zhang, E. Wang, J. Y. Li, L.-Q. Chen, C.-B. Eom, D. G. Schlom, and X. Q. Pan, Science 334, 968 (2011). 10.1126/science.1206980
22. D.-W. Fu, H.-L. Cai, Y. M. Liu, Q. Ye, W. Zhang, Y. Zhang, X.-Y. Chen, G. Giovannetti, M. Capone, J. Y. Li, and R.-H. Xiong, Science 339, 425 (2013). 10.1126/science.1229675
23. Q. Yu, J.-F. Li, Z.-X. Zhu, Y. Xu, and Q. M. Wang, J. Appl. Phys. 112, 014102 (2012). 10.1063/1.4731214
24. Y. M. Liu, Y. H. Zhang, M.-J. Chow, Q. N. Chen, and J. Y. Li, Phys. Rev. Lett. 108, 078103 (2012). 10.1103/PhysRevLett.108.078103
25. B. J. Rodriguez, C. Callahan, S. V. Kalinin, and R. Proksch, Nanotechnology 18, 475504 (2007). 10.1088/0957-4484/18/47/475504
26. H. Kuwabara, N. Menou, and H. Funakubo, Appl. Phys. Lett. 90, 222901 (2007). 10.1063/1.2743748
27. Z.-X. Zhu and J.-F. Li, Appl. Surf. Sci. 256, 3880 (2010). 10.1016/j.apsusc.2010.01.044
28. S. Jesse, A. P. Baddorf, and S. V. Kalinin, Appl. Phys. Lett. 88, 062908 (2006). 10.1063/1.2172216
29. N. M. Hagh, B. Jadidian, and A. Safari, J. Electroceram. 18, 339 (2007). 10.1007/s10832-007-9171-x
30. Q. Yu, J.-F. Li, W. Sun, Z. Zhou, Y. Xu, Z.-K. Xie, F.-P. Lai, and Q.-M. Wang, J. Appl. Phys. 113, 024101 (2013). 10.1063/1.4773542
31. J.-Y. Dai and J.-X. Wong, Prog. Phys. 29, 197 (2009).
32. I. K. Bdikin, J. A. Pérez, I. Coondoo, A. M. R. Senos, P. Q. Mantas, and A. L. Kholkin, J. Appl. Phys. 110, 052003 (2011). 10.1063/1.3623768
33. W. Gong, J.-F. Li, X. C. Chu, Z. L. Gui, and L. T. Li, J. Appl. Phys. 96, 590 (2004). 10.1063/1.1759072
34. S. Sun, Y. M. Wang, P. A. Fuierer, and B. A. Tuttle, Integr. Ferroelectr. 23, 25 (1999). 10.1080/10584589908210138
35. S. V. Kalinin, B. J. Rodriguez, S. Jesse, J. Shin, A. P. Baddorf, P. Gupta, H. Jain, D. B. Williams, and A. Gruverman, Microsc. Microanal. 12, 206 (2006). 10.1017/S1431927606060156