Domain-wall contribution to the piezoelectric response of epitaxial ferroelectric thin films

Applied Physics Letters

Volumn 71, Issue 25, 1997, Pages 3646-3648

  Pertsev, N A ^a   Emelyanov, A Yu ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DIFFERENTIAL EQUATIONS; DISLOCATIONS (CRYSTALS); ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; MOLECULAR VIBRATIONS; PIEZOELECTRICITY; THIN FILMS; VOLUME FRACTION;

DOMAIN WALL CONTRIBUTION; LANDAU-GINSBURG-DEVONSHIRE THEORY; TRANSLATIONAL VIBRATIONS;

FERROELECTRIC MATERIALS;

EID: 0031382698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120468     Document Type: Article

References (25)

1. A. M. Flynn, L. S. Tavrow, S. F. Bart, R. A. Brooks, D. J. Ehrlich, K. R. Udayakumar, and L. E. Cross, J. Micromech. Systems 1, 44 (1992).
2. P. Muralt, M. Kohli, T. Maeder, A. Kholkin, K. Brooks, N. Setter, and R. Luthier, Sens. Actuators A 48, 157 (1995).
3. K. Lefki and G. J. M. Dormans, J. Appl. Phys. 76, 1764 (1994).
4. H. D. Chen, K. R. Udayakumar, C. J. Gaskey, and L. E. Cross, Appl. Phys. Lett. 67, 3411 (1995).
5. D. Damjanovich, K. G. Brooks, A. Kholkin, M. Kohli, T. Maeder, P. Muralt, and N. Setter, Mater. Res. Soc. Symp. Proc. 360, 429 (1995).
6. A. L. Kholkin, E. L. Colla, A. K. Tagantsev, D. V. Taylor, and N. Setter, Appl. Phys. Lett. 68, 2577 (1996).
7. A. L. Kholkin, M. L. Calzada, P. Ramos, J. Mendiola, and N. Setter, Appl. Phys. Lett. 69, 3602 (1996).
8. A. E. M. De Veirman, J. Timmers, F. J. G. Hakkens, J. F. M. Cillessen, and R. M. Wolf, Philips J. Res. 47, 185 (1993).
9. R. Ramesh, T. Sands, and V. G. Keramidas, Appl. Phys. Lett. 63, 731 (1993).
10. B. S. Kwak, A. Erbil, J. D. Budai, M. F. Chisholm, L. A. Boatner, and B. J. Wilkens, Phys. Rev. B 49, 14 865 (1994).
11. J. S. Speck, A. Seifert, W. Pompe, and R. Ramesh, J. Appl. Phys. 76, 477 (1994).
12. Y. M. Kang, J. K. Ku, and S. Baik, J. Appl. Phys. 78, 2601 (1995).
13. M. J. Nystrom, B. W. Wessels, J. Chen, and T. J. Marks, Appl. Phys. Lett. 68, 761 (1996).
14. N. A. Pertsev, G. Arlt, and A. G. Zembilgotov, Microelectronics Eng. 29, 135 (1995).
15. N. A. Pertsev, G. Arlt, and A. G. Zembilgotov, Phys. Rev. Lett. 76, 1364 (1996).
16. E. I. Bondarenko, V. Yu. Topolov, and A. V. Turik, Ferroelectrics 110, 53 (1990).
17. G. Arlt and N. A. Pertsev, J. Appl. Phys. 70, 2283 (1991).
18. N. A. Pertsev and A. G. Zembilgotov, J. Appl. Phys. 80, 6401 (1996).
19. N. A. Pertsev and A. G. Zembilgotov, J. Appl. Phys. 78, 6170 (1995).
20. M. J. Haun, E. Furman, S. J. Jang, H. A. McKinstry, and L. E. Cross, J. Appl. Phys. 62, 3331 (1987).
21. J. S. Speck, A. C. Daykin, A. Seifert, A. E. Romanov, and W. Pompe, J. Appl. Phys. 78, 1696 (1995).
22. A. E. Romanov and V. I. Vladimirov, in Dislocations in Solids, edited by F. R. N. Nabarro (North-Holland, New York, 1992), p. 191.
23. E. G. Fesenko, V. G. Gavrilyachenko, and A. F. Semenchev, Domain Structure of Multiaxial Ferroelectric Crystals (University Press, Rostovon-Don, 1990).
24. N. A. Pertsev and G. Arlt, J. Appl. Phys. 74, 4105 (1993).
25. M. J. Haun, Z. Q. Zhuang, E. Furman, S. J. Jang, and L. E. Cross, Ferroelectrics 99, 45 (1989).