Low partial pressure chemical vapor deposition of graphene on copper

IEEE Transactions on Nanotechnology

Volumn 11, Issue 2, 2012, Pages 255-260

  Sun, Jie ^a   Lindvall, Niclas ^a   Cole, Matthew T ^b   Angel, Koh T T ^c   Wang, Teng ^a   Teo, Kenneth B K ^d   Chua, Daniel H C ^c   Liu, Johan ^a   Yurgens, August ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d AIXTRON Nanoinstruments Ltd   (United Kingdom)

Author keywords

Chemical vapor deposition; graphene; low partial pressure; nanoelectronics; wet transfer

Indexed keywords

A-CARBON; CARBON GRIDS; ELECTRON TRANSPORT MEASUREMENTS; MOBILITIES OF ELECTRON; ROOM TEMPERATURE; SYSTEMATIC STUDY; WET TRANSFER; ZERO GATE;

CHEMICAL VAPOR DEPOSITION; MECHANICAL PROPERTIES; MONOLAYERS; NANOELECTRONICS; PARTIAL PRESSURE; SILICON COMPOUNDS; VAPORS;

GRAPHENE;

EID: 84863338266     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2160729     Document Type: Article

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