10dB small-signal graphene FET amplifier

Electronics Letters

Volumn 48, Issue 14, 2012, Pages 861-863

  Andersson, M A ^a   Habibpour, O ^a   Vukusic, J ^a   Stake, J ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FET AMPLIFIERS; MATCHING INDUCTORS; MAXIMUM GAIN; NOISE MODELLING; POWER GAINS; RETURN LOSS;

GRAPHENE; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; NOISE FIGURE;

AMPLIFIERS (ELECTRONIC);

EID: 84863697612     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.1347     Document Type: Article

References (12)

1. Samoska, L.A.: ' An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime ', IEEE Trans. Terahertz Sci. Technol., 2011, 1, (1), p. 9-24 10.1109/TTHZ.2011.2159558
2. Schwierz, F.: ' Graphene transistors ', Nature Nanotechnol., 2010, 5, (7), p. 487-496 10.1038/nnano.2010.89
3. Wang, H., Hsu, A., Wu, J., Kong, J., and Palacios, T.: ' Graphene frequency multipliers ', IEEE Electron Device Lett., 2009, 30, p. 547-549 10.1109/LED.2009.2016443 0741-3106
4. Habibpour, O., Cherednichenko, S., Vukusic, J., Yhland, K., and Stake, J.: ' A subharmonic graphene FET mixer ', IEEE Electron Device Lett., 2012, 33, (1), p. 71-73 10.1109/LED.2011.2170655 0741-3106
5. Han, S.-J., Jenkins, K.A., Valdes-Garcia, A., Franklin, A.D., Bol, A.A., and Haensch, W.: ' High-frequency graphene voltage amplifier ', Nano Lett., 2011, 11, p. 3690-3693 10.1021/nl2016637 1530-6984
6. Wu, Y.Q., Farmer, D.B., Valdes-Garcia, A., Zhu, W.J., Jenkins, K.A., Dimitrakopoulos, C., Avouris, P.h., and Lin, Y.-M.: ' Record high RF performance for epitaxial graphene transistors ', Tech. Dig. IEDM, Washington, DC, USA, 2011, p. 528-530
7. Pospieszalski, M.W.: ' Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence ', IEEE Trans. Microw. Theory Tech., 1989, 37, (9), p. 1340-1350 10.1109/22.32217 0018-9480
8. Habibpour, O., Vukusic, J., and Stake, J.: ' A large signal graphene FET model ', IEEE Trans. Electron Devices, 2012, 59, (4), p. 968-975 10.1109/TED.2012.2182675 0018-9383
9. Maas, S.A.: ' Noise in linear and nonlinear circuits ', (Artech House, 2005)
10. 'Noise figure measurement accuracy - the Y-Factor method,' Agilent Application Note, 57-2
11. Garcia, M., Stenarson, J., Yhland, K., Zirath, H., and Angelov, I.: ' A new extraction method for the two-parameter FET temperature noise model ', IEEE Trans. Microw. Theory Tech., 1998, 46, (11), p. 1679-1685 10.1109/22.734558 0018-9480
12. Schleeh, J., Alestig, G., Halonen, J., Malmros, A., Nilsson, B., Nilsson, P.A., Starski, J.P., Wadefalk, N., Zirath, H., and Grahn, J.: ' Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1K at 6GHz ', IEEE Electron Device Lett., 2012, 33, p. 664-666 10.1109/LED.2012.2187422 0741-3106