Assessing the performance of surface passivation using low-intensity photoluminescence characterization techniques

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 100-106

  Chan, Catherine E ^a   Abbott, Malcolm D ^a   Juhl, Mattias K ^a   Hallam, Brett J ^a   Xiao, Bo ^a   Wenham, Stuart R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Charge carrier lifetime; photoluminescence (PL); silicon; surface passivation

Indexed keywords

EFFECTIVE LIFETIME; NON-UNIFORM ILLUMINATION; PARASITIC EFFECT; PHOTOLUMINESCENCE CHARACTERIZATION; PHOTOLUMINESCENCE IMAGING; QUASI-STEADY STATE; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CHARGE CARRIERS; SILICON;

PHOTOLUMINESCENCE;

EID: 84891556518     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2282739     Document Type: Article

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