Broad range injection-dependent minority carrier lifetime from photoluminescence

Solar Energy Materials and Solar Cells

Volumn 102, Issue , 2012, Pages 220-224

  Giesecke, J A ^a   Niewelt, T ^a   Rudiger M ^a   Rauer, M ^a   Schubert, M C ^a   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Carrier lifetime; Defect spectroscopy; Photoluminescence; Silicon; Surface passivation

Indexed keywords

CARRIER CONCENTRATION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE DEFECTS; UNCERTAINTY ANALYSIS;

CARRIER LIFETIME MEASUREMENTS; DEFECT SPECTROSCOPY; EFFECTIVE CARRIER LIFETIMES; MINORITY CARRIER LIFETIMES; PHOTOCURRENT MEASUREMENT; PHOTOLUMINESCENCE LIFETIME; SURFACE PASSIVATION; TIME-DEPENDENT FLUCTUATIONS;

CARRIER LIFETIME;

EID: 84861094457     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.03.015     Document Type: Article

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