Passivation layers for indoor solar cells at low irradiation intensities

Energy Procedia

Volumn 27, Issue , 2012, Pages 406-411

  Ruhle K ^a,b   Rauer, M ^b   Rudiger M ^b   Giesecke, J ^b   Niewelt, T ^b   Schmiga, C ^b   Glunz, S W ^b   Kasemann, M ^a,b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Indoor; Low level injection; Passivation layer; Solar cell

Indexed keywords

EID: 84875483246     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.085     Document Type: Conference Paper

References (12)

1. S. W. Glunz, D. Biro, S. Rein, and W. Warta, Field-effect passivation of the SiO2/Si interface", Journal of Applied Physics, Vol. 86, Nr. 1, p. 683, 1999.
2. Stefan Dauwe, J. Schmidt, A. Metz, and R. Hezel, Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination", Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, p. 162-165, 2003.
3. J. Schmidt, A. Merkle, R. Bock, P. P. Altermatt, A. Cuevas, N. P. Harder, B. Hoex, R. van de Sanden, E. Kessels, and R. Brendel, Progress in the surface passivation of silicon solar cells", in 23rd European Photovoltaic Solar Energy Conference and Exhibition, p. 974-981, 2008.
4. S. Steingrube, P. P. Altermatt, D. S. Steingrube, J. Schmidt, and R. Brendel, Interpretation of recombination at c-Si/SiNx interfaces by surface damage", Journal of Applied Physics, Vol. 108, Nr. 1, p. 014506, 2010.
5. S. Steingrube, P. Altermatt, D. Zielke, F. Werner, J. Schmidt, and R. Brendel, Reduced passivation of silicon surfaces at low injection densities caused by H-induced defects", Proc. 25th EPSEC, p. 1748, 2010.
6. M. J. Kerr and A. Cuevas, General parameterization of Auger recombination in crystalline silicon", Journal of Applied Physics, Vol. 91, Nr. 4, p. 2473, 2002.
7. A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors", Journal of Applied Physics, Vol. 76, Nr. 5, p. 2851, 1994.
8. T. Trupke, R. A. Bardos, and M. D. Abbott, Self-consistent calibration of photoluminescence and photoconductance lifetime measurements", Applied Physics Letters, Vol. 87, Nr. 18, p. 184102, 2005.
9. J. A. Giesecke, M. C. Schubert, D. Walter, and W. Warta, Minority carrier lifetime in silicon wafers from quasi-steadystate photoluminescence", Applied Physics Letters, Vol. 97, Nr. 9, p. 092109, 2010.
10. R. A. Bardos, T. Trupke, M. C. Schubert, and T. Roth, Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers", Applied Physics Letters, Vol. 88, Nr. 5,p. 053504, 2006.
11. J. Giesecke, B. Michl, F. Schindler, M. Schubert, and W. Warta, Minority carrier lifetime of silicon solar cells from quasisteady-state photoluminescence", Solar Energy Materials and Solar Cells, 2011.
12. S. Olibet, E. Vallat-Sauvain, and C. Ballif, Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds", Physical Review B, Vol. 76, Nr. 3, p. 035326, 2007.