Effect of oxygen profiles on the RS characteristics of bilayer TaO x/TaOy based RRAM

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Volumn , Issue , 2013, Pages

  Li, Xinyi ^a   Wu, Huaqiang ^a   Wu, Minghao ^a   Deng, Ning ^a   Qian, He ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

oxygen profile; RRAM; tantalum oxide

Indexed keywords

BETTER PERFORMANCE; OXIDE DEPOSITION; OXYGEN PARTIAL PRESSURE; OXYGEN PROFILES; REACTIVE MAGNETRON SPUTTERING; RESISTIVE SWITCHING; ROOM TEMPERATURE; RRAM;

DESCALING; ELECTRON DEVICES; TANTALUM OXIDES;

OXYGEN;

EID: 84890513517     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2013.6628066     Document Type: Conference Paper

References (4)

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