Physics in designing desirable ReRAM stack structure - Atomistic recipes based on oxygen chemical potential control and charge injection/removal

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Kamiya, K ^a   Yang, M Y ^a   Magyari Kope, B ^b   Niwa, M ^a   Nishi, Y ^b   Shiraishi, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMISTIC STRUCTURE; BARRIER LAYERS; DRIVING FORCES; STACK STRUCTURE; SWITCHING PROCESS;

CHEMICAL POTENTIAL; ELECTRON DEVICES; OXYGEN VACANCIES;

OXYGEN;

EID: 84876110422     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479078     Document Type: Conference Paper

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