SCOPUS 정보 검색 플랫폼

Volumn 289, Issue , 2014, Pages 564-570

Influence of annealing conditions on the crystallographic structure, chemical composition and luminescence of ZnO thin films

(3) Khojier, K a Savaloni, H b Amani, E c

a ISLAMIC AZAD UNIVERSITY (Iran)

b UNIVERSITY OF TEHRAN (Iran)

c ISLAMIC AZAD UNIVERSITY (Iran)

Author keywords

Annealing conditions; Chemical composition; Nanostructure; Surface morphology; Thin films; ZnO

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; NANOSTRUCTURES; OPTICAL FILMS; OXYGEN VACANCIES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICES; SURFACE MORPHOLOGY; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING CONDITION; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; CRYSTALLOGRAPHIC STRUCTURE; DISLOCATION DENSITIES; IMPURITY CONCENTRATION; PHOTOLUMINESCENCE SPECTRUM; PREFERRED ORIENTATIONS;

THIN FILMS;

EID: 84890564881 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2013.11.043 Document Type: Article

Times cited : (23)

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