Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

Applied Physics Letters

Volumn 103, Issue 24, 2013, Pages

  Wang, Lijuan ^a   Li, Yiping ^b   Song, Xiaofeng ^a   Liu, Xin ^a   Zhang, Long ^a   Yan, Donghang ^c  

^a CHANGCHUN UNIVERSITY OF TECHNOLOGY   (China)

^b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE MEASUREMENT; GATE INSULATOR; INTERFACE TRAPS; METAL-INSULATOR SEMICONDUCTOR DEVICES; PARA-SEXIPHENYL; SERIES RESISTANCES; TRAP ENERGY LEVELS; VANADYL PHTHALOCYANINE;

ELECTRIC RESISTANCE; MIM DEVICES; SILICON NITRIDE;

ELECTRIC PROPERTIES;

EID: 84890507234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4845815     Document Type: Article

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