SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 550, Issue , 2014, Pages 582-586

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

(3) Lin, Jian Huang a Zeng, Jian Jhou a Lin, Yow Jon a

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

Defect; Diode; Electrical property; Graphene; Si

Indexed keywords

ELECTRONIC CONDUCTION; ELECTRONIC TRANSPORT; EXPERIMENTAL DEMONSTRATIONS; FUNCTIONAL DEVICES; IDEALITY FACTORS; INTERFACIAL DEFECT; RECTIFYING BEHAVIORS; SI SCHOTTKY DIODE;

DEFECTS; DIODES; ELECTRIC PROPERTIES; GRAPHENE; SCHOTTKY BARRIER DIODES;

SILICON;

EID: 84890313600 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.11.079 Document Type: Article

Times cited : (26)

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