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Volumn 49, Issue 6, 2011, Pages 2033-2038

Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Author keywords

[No Author keywords available]

Indexed keywords

FERMI ENERGY; FREE HOLES; GRAPHENE PLANE; HIGH POWER APPLICATIONS; IN-SITU; INTERLAYER SEPARATION; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SEMICONDUCTOR INTERFACES; THERMIONIC EMISSION THEORY;

EID: 79951951808     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.01.029     Document Type: Article
Times cited : (100)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.