Electronic transport and Schottky barrier heights of p-type CuAlO 2 Schottky diodes

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Lin, Yow Jon ^a   Luo, Jie ^a   Hung, Hao Che ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE-VOLTAGE METHOD; COMBINED EFFECT; ELECTRON TRAPPING; ELECTRONIC TRANSPORT; IDEALITY FACTORS; SCHOTTKY BARRIER HEIGHTS; TIME DOMAIN MEASUREMENT;

PHYSICAL PROPERTIES; PHYSICS;

SCHOTTKY BARRIER DIODES;

EID: 84877954782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4806970     Document Type: Article

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