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Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

Graphene-based ultrafast diode

(3) Dragoman, D a Dragoman, M b Plana, R c

a UNIVERSITY OF BUCHAREST (Romania)

b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES (Romania)

c LAAS CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC DIODES; CURRENT VOLTAGE; GATE VOLTAGES; IDEALITY FACTORS; INCIDENT SIGNALS; INCLINATION ANGLES; OPERATING POINTS; RECTIFYING PROPERTIES; ULTRA-FAST DIODE;

DISTILLATION; GRAPHENE;

SEMICONDUCTOR DIODES;

EID: 78149462795 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3501051 Document Type: Article

Times cited : (48)

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