Modeling electronic properties and quantum transport in doped and defective graphene

Solid State Communications

Volumn 175-176, Issue , 2013, Pages 90-100

  Botello Mendez A R ^a   Lherbier, A ^a   Charlier, J C ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

A. Graphene; D. Electronic structure; D. Electronic transport; E. Numerical simulations

Indexed keywords

E. NUMERICAL SIMULATIONS; ELECTRONIC TRANSPORT; EXTENDED DEFECT; HEXAGONAL NETWORKS; QUANTUM TRANSPORT; SPECIFIC DEFECTS; STRUCTURAL MODIFICATIONS; TRANSPORT MEASUREMENTS;

CHEMICAL MODIFICATION; DEFECTS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; POINT DEFECTS; QUANTUM ELECTRONICS; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84890120609     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2013.08.029     Document Type: Article

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