Mobility gaps in disordered graphene-based materials: An ab initio -based tight-binding approach to mesoscopic transport

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 11-12, 2010, Pages 2628-2631

  Biel, Blanca ^a   Cresti, Alessandro ^b   Avriller, Rémi ^c   Dubois, Simon ^d   López Bezanilla, Alejandro ^b   Triozon, François ^b   Blase, X ^e   Charlier, Jean Christophe ^d   Roche, Stephan ^b,f  

^a UNIVERSITY OF GRANADA   (Spain)

^b CEA GRENOBLE   (France)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^e LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^f CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

Author keywords

Carbon nanotubes; Doping; Electronic structure calculations; Electronic transport; Graphene; Nanoribbons

Indexed keywords

DOPING; ELECTRONIC STRUCTURE CALCULATIONS; ELECTRONIC TRANSPORT; GRAPHENES; NANORIBBONS;

BORON; BORON COMPOUNDS; CARBON NANOTUBES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 78449249728     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983826     Document Type: Article

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26. The drastic drop of the conductance close to the subband onset in Figs. 2 and 4 is a consequence of the enhanced scattering due to the larger density of states at the van Hove's singularities. It is enhanced with increasing disorder, and it is absent in the single-dopant calculation since in this case there are no disorder-induced multiple scattering effects.