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Nanoscale

Volumn 3, Issue 7, 2011, Pages 2868-2872

One-dimensional extended lines of divacancy defects in graphene

(5) Botello Mendez A R a Declerck, X a Terrones, M b,c Terrones, H a Charlier, J C a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

b SHINSHU UNIVERSITY (Japan)

c PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; AB INITIO; ATOMIC LEVELS; DI-VACANCY DEFECTS; DIVACANCIES; ENERGETIC STABILITY; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES APPROACHES; GRAPHENE LATTICES; LOCAL DENSITY OF STATE; METALLIC WIRE; ONE-DIMENSIONAL (1D) ARRANGEMENT; QUANTUM TRANSPORT; SCANNING TUNNELING MICROSCOPY (STM); SENSING APPLICATIONS; TOPOLOGICAL DEFECT;

CALCULATIONS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCANNING TUNNELING MICROSCOPY; TOPOLOGY; TRANSPORT PROPERTIES;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMISTRY; QUANTUM THEORY; THERMODYNAMICS;

GRAPHITE; NANOSTRUCTURES; QUANTUM THEORY; THERMODYNAMICS;

EID: 79960168765 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c0nr00820f Document Type: Article

Times cited : (81)

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