Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity

Optics Express

Volumn 21, Issue 24, 2013, Pages 29719-29730

  Cheng, Baochang ^a   Xu, Jian ^a   Ouyang, Zhiyong ^a   Xie, Cuicui ^a   Su, Xiaohui ^a   Xiao, Yanhe ^a   Lei, Shuijin ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; INFRARED DEVICES; NANOWIRES; PHOTODETECTORS; PHOTONS; SURFACE STATES;

APPLIED BIAS VOLTAGE; BUILT-IN ELECTRIC FIELDS; DOMINANT MECHANISM; ELECTRON HOLE PAIRS; ILLUMINATION INTENSITY; NANOSTRUCTURED ZNO; NEAR-INFRARED RANGE; POTENTIAL BARRIER HEIGHT;

ZINC OXIDE;

NANOWIRE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; INFRARED RADIATION; PHOTOMETRY; RADIATION DOSE; RADIATION EXPOSURE; SOLAR ENERGY; ULTRAVIOLET RADIATION;

ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFRARED RAYS; NANOWIRES; PHOTOMETRY; RADIATION DOSAGE; SOLAR ENERGY; ULTRAVIOLET RAYS; ZINC OXIDE;

EID: 84890111315     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.029719     Document Type: Article

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