Optoelectrical and low-frequency noise characteristics of flexible ZnO-SiO2 photodetectors with organosilicon buffer layer

Optics Express

Volumn 21, Issue 8, 2013, Pages 9643-9651

  Lai, Wei Chih ^a   Chen, Jiun Ting ^a   Yang, Ya Yu ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; NANOCOMPOSITES; PHOTODETECTORS; PHOTONS;

APPLIED BIAS; DETECTIVITY; LOW-FREQUENCY NOISE CHARACTERISTICS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; OPTOELECTRICAL; ORGANOSILICONES; POLYETHERSULFONES; SOLAR-BLIND;

ZINC OXIDE;

ORGANIC COMPOUND; SILICON DIOXIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; LIGHT; PHOTOMETRY; RADIATION EXPOSURE; SEMICONDUCTOR; SIGNAL NOISE RATIO;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; ORGANIC CHEMICALS; PHOTOMETRY; SEMICONDUCTORS; SIGNAL-TO-NOISE RATIO; SILICON DIOXIDE; ZINC OXIDE;

EID: 84877148113     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.009643     Document Type: Article

References (22)

1. C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, "Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations," Semicond. Sci. Technol. 25(10), 105008 (2010).
2. L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, "Characteristic improvements of ZnO-based metal-semiconductor-metal photodetector on flexible substrate with ZnO cap layer," Jpn. J. Appl. Phys. 49(5), 052201 (2010).
3. H. Jiang and T. Egawa, "High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template," Appl. Phys. Lett. 90(12), 121121 (2007).
4. T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, "High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current," Solid-State Electron. 49(1), 117-122 (2005).
5. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, "AlxGa1?xN-based avalanche photodiodes with high reproducible avalanche gain," Appl. Phys. Lett. 90(16), 163506 (2007).
6. V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, "247 nm solar-blind ultraviolet p-i-n photodetector," J. Appl. Phys. 100(9), 096104 (2006).
7. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, "193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors," Appl. Phys. Lett. 92(5), 053501 (2008).
8. A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, "Recent developments of wide-bandgap semiconductor based UV sensors," Diamond Related Materials 18(5-8), 860-864 (2009).
9. W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, "Effects of annealing on the performance of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors," Mater. Sci. Semicond. Process. 11(2), 59-62 (2008).
10. Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, "Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain," Appl. Phys. Lett. 98(10), 103506 (2011).
11. U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Do?an, V. Avrutin, S. J. Cho, and H. Morkoç, "A comprehensive review of ZnO materials and devices," J. Appl. Phys. 98(4), 041301 (2005).
12. J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, "Deep-ultraviolet photodetectors from epitaxially grown NixMg1?xO," Appl. Phys. Lett. 97(16), 161113 (2010).
13. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, "Bending effects of ZnO nanorod metalsemiconductor-metal photodetectors on flexible polyimide substrate," Nanoscale Res. Lett. 7(1), 214 (2012).
14. S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, "Electronic structure and optical properties of ZnSiO3 and Zn2SiO4," J. Appl. Phys. 106(12), 123701 (2009).
15. S. Chakrabarti, D. Ganguli, and S. Chaudhuri, "Photoluminescence of ZnO nanocrystallites confined in sol-gel silica matrix," J. Phys. D Appl. Phys. 36(2), 146-151 (2003).
16. V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, "ZnO/SiO2 nanocomposite thin films by sol-gel method," Phys. Status Solidi., A Appl. Mater. Sci. 205(8), 2075-2079 (2008).
17. H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, "Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation," Nucl. Instrum. Methods Phys. Res. B 91, 96-99 (2007).
18. C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, "Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire," Appl. Phys. Lett. 97(16), 161102 (2010).
19. C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, "Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates," IEEE Sens. J. 7(7), 1020-11024 (2007).
20. K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, "Nitridebased MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer," J. Electrochem. Soc. 155, 959-963 (20108).
21. S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, "ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes," J. Cryst. Growth 293(1), 43-47 (2006).
22. S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, "ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts," J. Electrochem. Soc. 154(1), H26-H29 (2007).