Designing single GaAs nanowire lasers

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2012, Pages 101-102

  Saxena, D ^a   Mokkapati, S ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; GAAS NANOWIRES; LOW THRESHOLDS; MATERIAL GAIN; OPTIMAL STRUCTURES; PROVIDE GUIDANCES; ROOM TEMPERATURE; THRESHOLD GAIN;

GALLIUM ARSENIDE; MICROELECTRONICS; SEMICONDUCTING GALLIUM; STRUCTURAL OPTIMIZATION;

NANOWIRES;

EID: 84875590743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2012.6472380     Document Type: Conference Paper

References (6)

1. B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, "Single GaAs/GaAsP coaxial core?shell nanowire lasers," Nano Letters, vol. 9pp. 112-116, 2008.
2. R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, "Nanolasers grown on silicon," Nat Photon, vol. 5pp. 170-175, 2011.
3. C. Z. Ning, "Semiconductor nanolasers," physica status solidi (b), vol. 247pp. 774-788, 2010.
4. A. Z. Mariano and et al., "Optically pumped nanowire lasers: invited review," Semiconduc-tor Science and Technology, vol. 25, p. 024001, 2010.
5. S. Lien Chuang, Physics of Optoelectronic Devices, Wiley Series in Pure and Applied Optics: New York, 1995pp. 356-358.
6. N. Jiang, P. Parkinson, Q. Gao, S. Breuer, H. H. Tan, J. Wong-Leung, and C. Jagadish, "Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires," Applied Physics Letters, vol. 101pp. 023111-4, 2012.