Study and comparison of negative tone resists for fabrication of bright field masks for 14 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8522, Issue , 2012, Pages

  Zweber, Amy E ^a   Faure, Tom ^a   McGuire, Anne ^a   Sundberg, Linda K ^b   Sooriyakumaran, Ratnam ^b   Sanchez, Martha I ^b   Bozano, Luisa D ^b   Senna, Tasuku ^c   Fujita, Yuki ^c   Negishi, Yoshiyuki ^c   Tanabe, Masahito ^d   Kaneko, Takahiro ^d  

^a IBM   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c Toppan Photomasks Inc   (United States)

^d TOPPAN PRINTING CO LTD   (Japan)

Author keywords

CDU; Critical dimension uniformity; Develop loading; Fogging; Line edge roughness; Line width roughness; Lithography; Negative tone resist; Photomask; Resolution; Sensitivity

Indexed keywords

LITHOGRAPHY; MASKS; OPTICAL RESOLVING POWER; PHOTOMASKS; PHOTORESISTS; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SURVEYS;

CRITICAL DIMENSION UNIFORMITIES; FOGGING; LINE EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; NEGATIVE TONE RESIST; SENSITIVITY;

NANOTECHNOLOGY;

EID: 84889639142     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.976878     Document Type: Conference Paper

References (13)

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