Fundamental investigation of Negative Tone Development (NTD) for the 22nm node (and beyond)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7972, Issue , 2011, Pages

  Landie, Guillaume ^a   Xu, Yongan ^b   Burns, Sean ^b   Yoshimoto, Kenji ^c   Burkhardt, Martin ^d   Zhuang, Larry ^b   Petrillo, Karen ^b   Meiring, Jason ^b   Goldfarb, Dario ^c   Glodde, Martin ^c   Scaduto, Anthony ^b   Colburn, Matthew ^b   Desisto, Jason ^b   Bae, Young ^e   Reilly, Michael ^e   Andes, Cecily ^e   Vohra, Vaishali ^e  

^a STMICROELECTRONICS   (Italy)

^b IBM   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IBM MICROELECTRONICS   (United States)

^e DOW CHEMICAL COMPANY   (United States)

Author keywords

Contact hole patterning; Double patterning; Immersion lithography; Negative tone development

Indexed keywords

CONTACT HOLES; DISSOLUTION BEHAVIOR; DOUBLE PATTERNING; ETCH SELECTIVITY; FUNDAMENTAL MODELS; IMMERSION LITHOGRAPHY; MODEL SYSTEM; MODELING RESULTS; NEGATIVE TONE DEVELOPMENT; NEGATIVE TONES; OPTICAL PROXIMITY CORRECTIONS; PATTERN COLLAPSE; POSITIVE TONE; UNEXPOSED MATERIALS;

DISSOLUTION; ORGANIC SOLVENTS; PHOTORESISTS; QUARTZ;

MATHEMATICAL MODELS;

EID: 79955901387     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.882843     Document Type: Conference Paper

References (11)

1. T. Brunner and C. Fonseca. "Optimum tone for various feature types: positive versus negative" Proc. SPIE 4345, 30 (2001)
2. J. Bekeart et al. "Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes" JM3, Dec 23rd, 2010
3. H. Ito, D. Fenzel-Alexander, G. Breyta. "Dissolution behavior of phenolic resins and resists as studied by quartz crystal microbalance". Proc SPIE 3049, 575 (1997)
4. M. Toriumi "Theoretical Analysis of Development Behavior of Resist Measured by QCM" Proc. SPIE, 7273, (2009)
5. S.D. Burns et al "Understanding nonlinear dissolution rates in photoresists" Proc. SPIE 4345, 37 (2001)
6. J. Cantone, Negative Tone Imaging (NTI) at the 22nm Node: Process and Material Development, SPIE 7972, 21 (2011)
7. S.D. Burns, Silicon containing polymer in applications for 193 nm high NA lithography processes Proc. SPIE 6153, 61530K (2006)
8. K. Yoshimoto et al, "A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties", J. Appl. Phys. 96 (4), 1857 (2004).
9. CRC Handbook of Chemistry and Physics 83rd Edition (CRC Press, 2002)
10. Polymer Handbook, 4th Edition. J, Brandrup, E.H. Immergut, and E.A. Grulke (Ed.) (Wiley, 1999)
11. "Capillarity and Wetting Phenomena" Ch. 1. P.G. de Gennes, F. Brochard-Wyart and D. Quere (Springer, 2003)