1nm of Local CD accuracy for 45nm-node photomask with low sensitivity CAR for e-beam writer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6607, Issue PART 1, 2007, Pages

  Ugajin, Kunihiro ^a   Saito, Masato ^a   Suenaga, Machiko ^a   Higaki, Tomotaka ^a   Nishino, Hideaki ^a   Watanabe, Hidehiro ^a   Ikenaga, Osamu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Local CD; Low sensitivity CAR; Shot noise

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; SHOT NOISE;

CHEMICALLY AMPLIFIED RESISTS (CAR); LINE EDGE ROUGHNESS (LER); LOW SENSITIVITY CAR;

PHOTOMASKS;

ELECTRON BEAMS; LITHOGRAPHY; MASKING;

EID: 36248935508     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.728923     Document Type: Conference Paper

References (2)

1. "INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS, 2005 UPDATE", 2005
2. M.LYu, A.Sagel and B.Buller, "Exploring the fundamental limit of CD control: shot noise and CD uniformity improvement through resist thickness", Proceedings of SPIE, Vol.5853, pp.43-51, (2005)