From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of {\rm HfO}2-based FeFET devices

IEEE Transactions on Electron Devices

Volumn 60, Issue 12, 2013, Pages 4199-4205

  Mueller, Stefan ^a   Muller, Johannes ^b   Hoffmann, Raik ^b   Yurchuk, Ekaterina ^a   Schlosser, Till ^c   Boschke, Roman ^c   Paul, Jan ^b   Goldbach, Matthias ^c   Herrmann, Tom ^c   Zaka, Alban ^c   Schroder, Uwe ^a   Mikolajick, Thomas ^a,d  

^a Namlab GmbH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c GLOBALFOUNDRIES   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Disturb; embedded memory; endurance; ferroelectric field effect transistor (FeFET); rm V rm DD 3 scheme

Indexed keywords

DISTURB; DOPANT CONCENTRATIONS; EMBEDDED MEMORY; FERROELECTRIC PROPERTY; FERROELECTRIC TRANSISTORS; MATERIAL CHARACTERISTICS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; {\RM V}-{\RM DD}/3 SCHEME;

CAPACITORS; DURABILITY; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; MEMORY ARCHITECTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON; TRANSISTORS;

FERROELECTRIC MATERIALS;

EID: 84889594858     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2283465     Document Type: Article

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