Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Boescke T S ^a   Muller J ^b   Brauhaus D ^c   Schroder U ^d   Bottger U ^c  

^a Fraunhofer Fraunhofer Center for Nanoelectronic Technology ^*  (Germany)

^b FRAUNHOFER INSTITUTE FOR PHOTONIC MICROSYSTEMS   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d NAMLAB GGMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FERROELECTRICITY; HAFNIUM OXIDES; NANOCRYSTALLINE MATERIALS; POLARIZATION; POWER TRANSISTORS; SILICON COMPOUNDS; SILICON OXIDES; THRESHOLD VOLTAGE;

CMOS COMPATIBLE; COERCIVE FIELD; FERROELECTRIC FIELD EFFECT TRANSISTORS; GATE INSULATOR; ORTHORHOMBIC PHASE; PIEZOELECTRIC RESPONSE; POLARIZATION MEASUREMENTS; TETRAGONAL PHASE;

FIELD EFFECT TRANSISTORS;

EID: 84857002165     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131606     Document Type: Conference Paper

References (16)

1. N. Setter et al., JAP 100, 051606(2006)
2. S. Wu et al., TED 21, 499 (1974)
3. S.Sakai et al., EDL 25, 369 (2004)
4. and T. Juan, EDL 27, 217 (2006)
5. M. Warusawithana et al., Science 324, 367 (2009)
6. T.P. Ma, EDL 23, 386 (2002)
7. K. Hubbard et al., J. Mater. Res. 11 (1996)
8. D. Triyoso et al., APL 89, 132903 (2006)
9. S. Migita et al., Symp. VLSI Tech. 2008, 152
10. M. Lines & A. Glass, Principles and Applications of Ferroelectrics,Oxford 2001
11. D. Marshall et al., J. Am. Ceram. Soc. 72, 218 (1989)
12. T. S. Böscke et al., APL 99, 102903 (2011)
13. T. S. Böscke et al., APL 99, 112904 (2011)
14. J. Müller et al., APL 99, 112901 (2011)
15. T. S. Böscke, "Crystalline Hafnia and Zirconia based Dielectric for Memory Applications", Ph.D. Thesis.
16. P. D. Kirsch et al, APL 89, 242909 (2006)