Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 25-26

  Muller J ^a   Yurchuk, E ^b   Schlosser T ^c   Paul, J ^a   Hoffmann, R ^a   Muller S ^b   Martin, D ^b   Slesazeck, S ^b   Polakowski, P ^a   Sundqvist, J ^a   Czernohorsky, M ^a   Seidel, K ^a   Kucher P ^a   Boschke, R ^c   Trentzsch, M ^c   Gebauer, K ^c   Schroder U ^b   Mikolajick, T ^b  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Namlab GmbH   (Germany)

^c GLOBALFOUNDRIES   (Germany)

Author keywords

FeFET; ferroelectric; HfO 2; HKMG; NVM

Indexed keywords

DATA STORAGE; FEFET; FERROELECTRIC FIELD EFFECT TRANSISTORS; HFO 2; HKMG; MEMORY WINDOW; NON-VOLATILE DATA; NON-VOLATILE MEMORIES; NVM; PROGRAM/ERASE; RETENTION LOSS; THRESHOLD VOLTAGE SHIFTS; WEAR LEVELING;

FERROELECTRIC MATERIALS;

EID: 84866536057     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242443     Document Type: Conference Paper

References (3)

1. L. V. Hai, M. Takahashi and S. Sakai, "Fabrication and characterization of sub-0.6-μm ferroelectric-gate field-effect Transistors", Semicond. Sci. Technol. 25, Oct 2010.
2. L. V. Hai, M. Takahashi and S. Sakai, "Downsizing of Ferroelectric-Gate-Field-Effect-Transistors for ferroelectric-NAND Flash Memory", IEEE Non-Volatile Semiconductor Memory Workshop, Jun 2011.
3. 2: CMOS compatible ferroelectric field-effect transistors", IEEE IEDM Techn. Dig., Dec 2011.