Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 185-187

  Müller, Johannes ^a   Böscke, Tim S ^b,c   Schröder, Uwe ^b,d   Hoffmann, Raik ^a   Mikolajick, Thomas ^d   Frey, Lothar ^e  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c Bosch Solar Energy   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Hafnium oxide; metal ferroelectric insulator semiconductor (MFIS) FET; nonvolatile memory

Indexed keywords

APPLIED FIELD; CHARACTERISTIC TIME; CMOS COMPATIBLE; FERROELECTRIC DOMAINS; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC PHASE; FIELD DEPENDENCE; GATE BIAS; GATE STACKS; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR- SEMICONDUCTOR (MFIS) FET; MFIS STRUCTURE; MFIS-FET; NON-VOLATILE; NON-VOLATILE MEMORIES; POLARIZATION REVERSALS; POLARIZATION SWITCHING; PROGRAM AND ERASE; PULSEWIDTHS; RETENTION MEASUREMENT; SWITCHING BEHAVIORS; SWITCHING SPEED;

CAPACITORS; FERROELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; MESFET DEVICES; METALS; POLARIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING; TITANIUM NITRIDE;

FERROELECTRICITY;

EID: 84856294639     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2177435     Document Type: Article

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