A processing window for fabricating heavily doped silicon nanowires by metal-assisted chemical etching

Journal of Physical Chemistry C

Volumn 117, Issue 47, 2013, Pages 25090-25096

  Qi, Yangyang ^a   Wang, Zhen ^a   Zhang, Mingliang ^a   Yang, Fuhua ^a   Wang, Xiaodong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION RANGES; CURRENT-VOLTAGE MEASUREMENTS; DOPING CONCENTRATION; ELECTRON TRANSFER PROCESS; HEAVILY DOPED SILICONS; METAL-ASSISTED CHEMICAL ETCHING; PROCESSING WINDOWS; REACTION TEMPERATURE;

ETCHING; NANOWIRES; SILICON; SILVER; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 84889563040     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp407720e     Document Type: Article

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