Effects of indium concentration on the efficiency of amorphous In-Zn-O/SiOx/n-Si hetero-junction solar cells

Solar Energy Materials and Solar Cells

Volumn 121, Issue , 2014, Pages 176-181

  Fang, Hau Wei ^a   Hsieh, Tsung Eong ^a   Juang, Jenh Yih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hetero junction structure solar cells; Indium zinc oxide; Pulsed laser deposition

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; EFFICIENCY; II-VI SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR POWER GENERATION; SUBSTRATES; ZINC OXIDE;

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); ILLUMINATION CONDITIONS; INDIUM ZINC OXIDES; INTERFACE TRAP DENSITY; JUNCTION STRUCTURE; PERFORMANCE ENHANCEMENTS; PHOTOVOLTAIC PERFORMANCE; VISIBLE-LIGHT WAVELENGTHS;

INDIUM COMPOUNDS;

EID: 84889026951     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.11.003     Document Type: Article

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